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TriQuint
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CFH800 Datasheet Preview

CFH800 Datasheet

High-Linearity Packaged pHEMT FET

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CFH800 pdf
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Product Description
The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept
point and low noise figure. The device is suitable for front-end applications up to
4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN
front-ends. The device achieves a noise figure as low as 0.50 dB with 17 dB
associated gain at 1.8 GHz. It is packaged in a low-cost miniature SC70 package.
Features
Low Noise figure and high associated gain
for high IP3 receiver stages up to 4 GHz
NF = 0.50dB; Ga = 17 dB @ 3V, 30 mA
f = 1.8 GHz
Low cost miniature package SC70
LG = 0.4µm; WG = 800µm
Applications
PCS CDMA and UMTS Receivers
WLAN Multicarrier Receivers
Basestations
Package Style
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
For additional information and latest specifications, see our website: www.triquint.com
Revision C, April 29, 2004
1



TriQuint
TriQuint

CFH800 Datasheet Preview

CFH800 Datasheet

High-Linearity Packaged pHEMT FET

No Preview Available !

CFH800 pdf
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
ID Drain Current
TCH Channel Temperature
TSG Storage Temperature
PTOT Total Power Dissipation (TS </= 80.7°C)1
Thermal Resistance
Notes:
RthChS
Channel-soldering point source
1) TS: Temperature measured on the source lead at the soldering point to the PCB.
Absolute Maximum Value
5.5
6.5
-2.0
160
+150
-65 to +150
350
Units
V
V
V
mA
°C
°C
mW
198 K/W
Electrical Specifications
Symbol
Parameter
Conditions
Min.
IDSS Drain-Source Saturation VDS = 3V; VGS = 0V
Current
0
VGS Pinch-off Voltage VDS = 3V; ID = 1 mA
IG
Gate Leakage Current
VDS = 3V; ID = 30 mA
-0.7
-
gm
Transconductance
VDS = 3V; ID = 30 mA
F Noise Figure*
VDS = 3V; ID = 10 mA; f = 1.8 GHz
ID = 30 mA
Ga Associated Gain VDS = 3V; ID = 10 mA; f = 1.8 GHz
ID = 30 mA
140
-
-
-
-
IIP3 Input 3rd Order Intercept VDS = 3V; ID = 10 mA; f = 1.8 GHz
Point ID = 30 mA
-
-
Note*: Parameters are measured at input impedance for minimum noise figure and output impedance for maximum gain.
Typ/Nom
80
-0.25
-
200
0.56
0.50
15.0
17.0
8.5
13.0
Max.
140
0
10
-
-
-
-
-
-
-
Units
mA
V
µA
mS
dB
dB
dB
dB
dBm
dBm
For additional information and latest specifications, see our website: www.triquint.com
Revision C, April 29, 2004
2


Part Number CFH800
Description High-Linearity Packaged pHEMT FET
Maker TriQuint
Total Page 8 Pages
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