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Toshiba Electronic Components Datasheet

K16A60W Datasheet

TK16A60W

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K16A60W pdf
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
3. Packaging and Internal Circuit
TK16A60W
TO-220SIS
1: Gate
2: Drain
3: Source
1 2012-08-27
Rev.2.0


Toshiba Electronic Components Datasheet

K16A60W Datasheet

TK16A60W

No Preview Available !

K16A60W pdf
TK16A60W
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
600
±30
15.8
63.2
40
231
4.0
15.8
63.2
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 25.3 mH, RG = 25 , IAR = 4.0 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
3.13 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2012-08-27
Rev.2.0


Part Number K16A60W
Description TK16A60W
Maker Toshiba Semiconductor
Total Page 10 Pages
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