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Toshiba Electronic Components Datasheet

C4681 Datasheet

2SC4681

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C4681 pdf
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4681
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4681
Unit: mm
· Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
· Low collector saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA)
· Complementary to 2SA1802
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
(Note)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
6
3
6
0.5
1.0
10
150
55 to 150
V
V
V
A
A
W
°C
°C
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2002-07-23


Toshiba Electronic Components Datasheet

C4681 Datasheet

2SC4681

No Preview Available !

C4681 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
VCEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
Test Condition
VCB = 30 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 20 V, IC = 0.5 A
VCE = 2 V, IC = 3 A
IC = 3 A, IB = 60 mA
VCE = 2 V, IC = 3 A
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SC4681
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
10 ― ―
V
200 600
140 200
0.33 0.5
V
0.92 1.2
V
150 MHz
27 pF
C4681
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2 2002-07-23


Part Number C4681
Description 2SC4681
Maker Toshiba
Total Page 3 Pages
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