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TelCom Semiconductor
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TC1428 Datasheet Preview

TC1428 Datasheet

(TC1426 - TC1428) 1.2A DUAL HIGH-SPEED MOSFET DRIVERS

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TC1428 pdf
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1TC1426
TC1427
TC1428
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
FEATURES
s Low Cost
s Latch-Up Protected: Will Withstand 500 mA Reverse
Output Current
s ESD Protected ................................................... ±2 kV
s High Peak Output Current ........................ 1.2A Peak
s High Capacitive Load Drive
Capability ...................................... 1000pF in 38nsec
s Wide Operating Range ........................... 4.5V to 16V
s Low Delay Time ...................................... 75nsec Max
s Logic Input Threshold Independent of
Supply Voltage
s Output Voltage Swing to Within 25mV of
Ground or VDD
s Low Output Impedance ........................................ 8
APPLICATIONS
s Power MOSFET Drivers
s Switched Mode Power Supplies
s Pulse Transformer Drive
s Small Motor Controls
s Print Head Drive
PIN CONFIGURATIONS
NC 1
8 NC
NC 1
8 NC
NC 1
8 NC
IN A 2
7 OUT A IN A 2
7 OUT A IN A 2
7 OUT A
TC1426CPA
GND 3
6 VDD
TC1427CPA
GND 3
6 VDD
TC1428CPA
GND 3
6 VDD
IN B 4
5 OUT B IN B 4
5 OUT B IN B 4
5 OUT B
2, 4 7, 5
2, 4 7, 5
27
INVERTING
NC = NO CONNECTION
NON-INVERTING
45
NC 1
IN A 2
GND 3
IN B 4
8 NC
NC 1
TC1426COA 7 OUT A IN A 2
6 VDD GND 3
5 OUT B IN B 4
8 NC
NC 1
7 OUT A IN A 2
TC1427COA
6 VDD GND 3
5 OUT B IN B 4
8 NC
7 OUT A
TC1428COA
6 VDD
5 OUT B
2, 4 7, 5
2, 4 7, 5
27
INVERTING
NC = NO CONNECTION
NON-INVERTING
45
FUNCTIONAL BLOCK DIAGRAM
V+
Ϸ 2.5mA
Ϸ500µA
TC1426 INVERTING
TC1427 NONINVERTING
TC1428 INVERTING/NONINVERTING
NONINVERTING INVERTING
www.DataSheet4U.com OUTPUT
OUTPUT
(TC1427)
(TC1426)
INPUT
GND
NOTE: TC1428 has one inverting and one noninverting driver.
Ground any unused driver input.
TELCOM SEMICONDUCTOR, INC.
GENERAL DESCRIPTION
The TC1426/27/28 are a family of 1.2A dual high- speed
drivers. CMOS fabrication is used for low power consump-
tion and high efficiency.
These devices are fabricated using an epitaxial layer to
effectively short out the intrinsic parasitic transistor respon-
sible for CMOS latch-up. They incorporate a number of other
design and process refinements to increase their long-term
reliability.
The TC1426 is compatible with the bipolar DS0026, but
only draws 1/5 of the quiescent current. The TC1426/27/28
are also compatible with the TC426/27/28, but with 1.2A
peak output current rather than the 1.5A of the TC426/27/28
devices.
Other compatible drivers are the TC4426/27/28 and the
TC4426A/27A/28A. The TC4426/27/28 have the added
feature that the inputs can withstand negative voltage up to
5V with diode protection circuits. The TC4426A/27A/28A
have matched input to output leading edge and falling edge
delays, tD1 and tD2, for processing short duration pulses in
the 25 nanoseconds range. All of the above drivers are pin
compatible.
The high-input impedance TC1426/27/28 drivers are
CMOS/TTL input-compatible, do not require the speed-up
needed by the bipolar devices, and can be directly driven by
most PWM ICs.
This family of devices is available in inverting and non-
inverting versions. Specifications have been optimized to
achieve low-cost and high-performance devices, well-suited
for the high-volume manufacturer.
ORDERING INFORMATION
Part No.
Package
TC1426COA
TC1426CPA
8-Pin SOIC
8-Pin Plastic DIP
TC1427COA
TC1427CPA
8-Pin SOIC
8-Pin Plastic DIP
TC1428COA
TC1428CPA
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
TC1426/7/8-8 10/11/96
4-207
2
3
4
5
6
7
8



TelCom Semiconductor
TelCom Semiconductor

TC1428 Datasheet Preview

TC1428 Datasheet

(TC1426 - TC1428) 1.2A DUAL HIGH-SPEED MOSFET DRIVERS

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TC1428 pdf
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TC1426
TC1427
TC1428
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation (TA 70°C)
Plastic DIP ...........................................................730W
SOIC ................................................................ 470 mW
Derating Factor
Plastic DIP ..................................................... 8 mW/°C
SOIC .............................................................. 4 mW/°C
Supply Voltage ............................................................18V
Input Voltage, Any Terminal .. (VDD + 0.3V) to (GND – 0.3V)
Operating Temperature : C Version .............. 0°C to +70°C
E Version ......... – 40°C to +85°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature ............................. +65°C to +150°C
Lead Temperature (Soldering ,10 sec) ................. +300°C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V VDD+ 16V unless otherwise specified.
Symbol
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Parameter
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
IPK Peak Output Current
I Latch-Up Current
Switching Time (Note 1)
tR Rise Time
tF Fall Time
tD1 Delay Time
tD2 Delay Time
Power Supply
IS Power Supply Current
Note: 1. Switching times guaranteed by design.
Test Conditions
Min Typ Max
Logic 1, Input Voltage
Logic 0, Input Voltage
0V VIN VDD
3—
——
–1 —
Test Figures 1 and 2
Test Figures 1 and 2
VIN = 0.8V,
IOUT = 10 mA, VDD = 16V
VIN = 3V,
IOUT = 10 mA, VDD = 16V
Withstand Reverse Current
VDD – 0.025
> 500
12
8
1.2
0.8
1
0.025
18
12
Test Figures 1 and 2
Test Figures 1 and 2
Test Figures 1 and 2
Test Figures 1 and 2
— — 35
— — 25
— — 75
— — 75
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
— —9
— — 0.5
Unit
V
V
µA
V
V
A
mA
nsec
nsec
nsec
nsec
mA
www.DataSheet4U.com
4-208
TELCOM SEMICONDUCTOR, INC.


Part Number TC1428
Description (TC1426 - TC1428) 1.2A DUAL HIGH-SPEED MOSFET DRIVERS
Maker TelCom Semiconductor
Total Page 6 Pages
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