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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SFF502G Datasheet

(SFF501G - SFF508G) Glass Passivated Super Fast Rectifiers

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SFF501G THRU SFF508G
Features
Isolation 5.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
5.0 Amperes
ITO-220AB
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
.134(3.4)DIA
.11 3 ( 3 .0 )D I A
.272(6.9)
.248(6.3)
.112 (2 .85 )
.100(2.55)
.606(15.5)
.583(14.8)
Case: ITO-220AB molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds 0.25”,(6.35mm) from
case.
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
. 11 0 (2 .8 )
.098(2.5)
.543(13.8)
.512(13.2)
PIN 1
PIN 3
PIN 2
Positive CT
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SFF SFF SFF SFF SFF SFF SFF SFF Units
501G 502G 503G 504G 505G 506G 507G 508G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 350 420 V
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 500 600 V
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
I(AV)
5.0
A
@TC = 100
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
70
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@2.5A
VF
0.98
1.3 1.7 V
Maximum DC Reverse Current
@ TA=25at Rated DC Blocking Voltage
@ TA=100
IR
10.0 uA
400 uA
Maximum Reverse Recovery Time
(Note 1)
Trr
35 nS
Typical Thermal Resistance (Note 3)
RθJA
5.5 /W
Typical Junction Capacitance (Note 2)
Cj
70
50 pF
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in, Al-Plate.
- 250 -


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

SFF502G Datasheet

(SFF501G - SFF508G) Glass Passivated Super Fast Rectifiers

No Preview Available !

SFF502G pdf
www.DataSheet4U.com
RATINGS AND CHARACTERISTIC CURVES (SFF501G THRU SFF508G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
8
TJ=1000C
6 100
4
2
0
0 50 100 150
CASE TEMPERATURE. (oC)
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
70
TJ=1250C
60
8.3ms Single Half Sine Wave
JEDEC Method
50
40
30
0
12
5 10
20
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
100
90
Tj=250C
80
70
60
50
SFF505GS~FSFF5F0510G8G~SFF504G
40
12
5 10 20
50 100 200
REVERSE VOLTAGE. (V)
500 1000
10
TJ=750C
TJ=250C
1
0.1
0
20 40 60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
30
10
3
1
SFF505G~SSFFF550067GG~SF508G
0.3
0.1
0.03
0.01
0.4
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
1.8
- 251 -


Part Number SFF502G
Description (SFF501G - SFF508G) Glass Passivated Super Fast Rectifiers
Maker Taiwan Semiconductor Company
Total Page 2 Pages
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