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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR20H200CT Datasheet

20.0AMPS. Schottky Barrier Rectifiers

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MBR20H200CT pdf
Pb
RoHS
COMPLIANCE
CREAT BY ART
MBR20H100CT - MBR20H200CT
20.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in power supply - output rectification, power
management, instrumentation
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260/10 seconds 0.25", (6.35mm) from case
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 1.82 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBR20HXXCT = Specific Device Code
G = Green Compound
Y = Year
WW = Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBR
20H100CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
100
70
100
MBR
20H150CT
150
105
150
MBR
20H200CT
200
140
200
Maximum Average Forward Rectified Current
IF(AV)
20
Peak Repetitive Surge Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TA=25
IF=10A, TA=125
IF=20A, TA=25
IF=20A, TA=125
Maximum Instantaneius Reverse
Current at Rated DC Blocking Voltage
Voltage Rate of Change,(Rated VR)
Maximum Typical Thermal Resistance
@ TA=25
@ TA=125
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
IFRM
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
20
150
1.0
0.5
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
5
2
10,000
1.5
- 65 to + 175
- 65 to + 175
Units
V
V
V
A
A
A
A
V
uA
mA
V/us
OC/W
OC
OC
Version:E11



  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

MBR20H200CT Datasheet

20.0AMPS. Schottky Barrier Rectifiers

No Preview Available !

MBR20H200CT pdf
RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT THRU MBR20H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
25
20
15
10
5 RESISTIVE OR
INDUCTIVELOAD
0
0 25 50 75 100 125 150
CASE TEMPERATURE (oC)
175
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISRICS PER LEG
100
10
TA=125
1 TA=25
0.1
PULSE WIDTH=300us
1% DUTY CYCLE
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER
LEG
10,000
1,000
100
0.1
1 10
REVERSE VOLTAGE (V)
100
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
150
8.3ms Single Half Sine Wave
125 JEDEC Method
100
75
50
25
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
10
1
0.1
0.01
TA=125
TA=75
0.001
TA=25
0.0001
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE
(%)
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10
1
0.1
0.01
0.1 1 10
T-PULSE DURATION. (sec)
100
Version:E11




Part Number MBR20H200CT
Description 20.0AMPS. Schottky Barrier Rectifiers
Maker Taiwan Semiconductor
Total Page 2 Pages
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