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TC1601 Datasheet Preview

TC1601 Datasheet

2W High Linearity and High Efficiency GaAs Power FETs

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TC1601
REV4_20060510
2W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 2W Typical Power at 6 GHz
PHOTO ENLARGEMENT
! Linear Power Gain: GL = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Via Holes Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BVDGO 15 V
! Lg = 0.35 µm, Wg = 5 mm
! High Power Added Efficiency: PAE 43 % for Class A Operation
! Lg = 0.35 µm, Wg = 5 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high
linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which
provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits
up to 20 GHz. All devices are 100 % DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical applications include commercial and military high performance power amplifier.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
MIN
P1dB
GL
IP3
PAE
Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 500 mA
Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA
Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS =500 mA,*PSCL = 20 dBm
Power Added Efficiency at 1dB Compression Power, f = 6 GHz
32.5
11
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
gm Transconductance at VDS = 2 V, VGS = 0 V
VP Pinch-off Voltage at VDS = 2 V, ID = 10 mA
BVDGO Drain-Gate Breakdown Voltage at IDGO = 2.5 mA
15
Rth Thermal Resistance
Note:
* PSCL: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1601’s are divided into 3 groups:
(1)TC1601P1519 : Vp = -1.5V to -1.9V (2) TC1601P1620 : Vp = -1.6V to -2.0V
(3)TC1601P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TYP MAX UNIT
33 dBm
12 dB
43 dBm
43 %
1.2 A
850 mS
-1.7**
Volts
18 Volts
6 °C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4



TRANSCOM
TRANSCOM

TC1601 Datasheet Preview

TC1601 Datasheet

2W High Linearity and High Efficiency GaAs Power FETs

No Preview Available !

TC1601 pdf
TC1601
REV4_20060510
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
Symbol
Parameter
Rating
VDS Drain-Source Voltage
12 V
VGS Gate-Source Voltage
-5 V
ID Drain Current
1.2 A
PT Continuous Dissipation
7.7 W
TCH Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
VDS Drain to Source Voltage
ID Drain Current
8V
500 mA
CHIP DIMENSIONS
1060± 12
DDDD
470± 12
G GG
G
Units: Micrometers
Chip Thickness: 50
Gate Pad: 76.0 x 59.5
Drain Pad: 86.0 x 76.0
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/4


Part Number TC1601
Description 2W High Linearity and High Efficiency GaAs Power FETs
Maker TRANSCOM
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