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T15L256A Datasheet Preview

T15L256A Datasheet

32K x 8 LOW POWER CMOS STATIC RAM

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T15L256A pdf
tm TE
CH
SRAM
T15L256A
32K X 8 LOW POWER
CMOS STATIC RAM
FEATURES
Access time: 35ns/70ns
Low power consumption : Active 200 mW(typ.)
Low operating current : 50mA
Single + 3.3V power supply
Fully static operation – No clock or refreshing
required
All inputs and outputs directly LVTTL compatible
Common I/O capability
Available packages : 28-pin 300 mil SOJ, 28-pin
SOP, TSOP-I (forward type ).
Output enable (OE ) available for very fast access
GENERAL DESCRIPTION
The T15L256A is a high speed, low power
CMOS static RAM organized as 32,768 x 8 bits that
operates on a single 3.3-volt power supply. This
device is packaged in standard 28-pin 300 mil SOJ ,
28-pin SOP, TSOP-I forward.
BLOCK DIAGRAM
Vcc
Vss
A0
.
.
DECODER
.
A14
CORE
ARRAY
PIN CONFIGURATION
A14 1
A12 2
A7 3
28 Vcc
27 WE
26 A13
CS
OE CONTROL
WE
I / O1
.
DATA I/O
.
I / O8
A6 4
25 A8
A5 5
A4 6
A3 7
SOJ
&
24 A9
23 A11
22 OE
PIN DESCRIPTION
A2
A1
A0
I/O1
I/O2
8
9
10
11
12
SOP
21 A10
20 CS
19 I/O8
18 I/O7
17 I/O6
SYMBOL
A0 - A14
I/O1 - I/O8
CS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
I/O3 13
Vss 14
16 I/O5
15 I/O4
WE Write Enable
OE Output Enable
Vcc Power Supply
OE 1
A11 2
28 A10 Vss
27 CS
Ground
A9 3
26 I/O8
A8 4
25 I/O7
A13 5
WE 6
VCC 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
TSOP-I
24 I/O6
23 I/O5 PART NUMBER EXAMPLES
22 I/O4
21 VSS
PACKAGE SPEED
20 I/O3 T15L256A-35J
SOJ
35ns
19
18
I/O2
I/O1
T15L256A-70P
TSOP-I
70ns
17 A0 T15L256A-70D
SOP
70ns
16 A1
15 A2
Taiwan Memory Technology, Inc. reserves the right P. 1
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:C



TM tech
TM tech

T15L256A Datasheet Preview

T15L256A Datasheet

32K x 8 LOW POWER CMOS STATIC RAM

No Preview Available !

T15L256A pdf
tm TE
CH
T15L256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 4.6
-0.5 to Vcc +0.5
0.5
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
VIL
VIH
TA
MIN
Typ-5%
-0.3
2.1
0
TYP
3.3
-
-
-
MAX
Typ+5%
0.8
Vcc+0.3
70
UNIT
V
V
V
°C
TRUTH TABLE
CS OE
HX
LH
LL
LX
WE
X
H
H
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Vcc
ISB, I SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V± 5%, Vss = 0V, Ta = 0 to 70°C)
PARAMETER
Input Leakage Current
SYM.
TEST CONDITIONS
ILI Vin=Vss to Vcc
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
ILO
VI/O=Vss to Vcc , CS =VIH
or OE= VIH or WE = VIL
VOL IOL= + 8.0mA
VOH IOH= - 4.0mA
CS =VIL, I/O=0mA
Icc Cycle = MIN.
-35
Duty = 100%
-70
Standby Power
Supply Current
ISB CS =VIH, Cycle=MIN, Duty=100%
ISB1 CS Vcc-0.2V,f=0MHz
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25°C
MIN.
-10
-10
-
2.4
-
-
-
-
TYP. MAX. UNIT
- +10 uA
- +10 uA
- 0.4 V
- -V
- 40 mA
- 35 mA
- 8 mA
- 0.8 mA
Taiwan Memory Technology, Inc. reserves the right P. 2
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:C


Part Number T15L256A
Description 32K x 8 LOW POWER CMOS STATIC RAM
Maker TM tech
Total Page 10 Pages
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