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Seme LAB
Seme LAB

D1004 Datasheet Preview

D1004 Datasheet

METAL GATE RF SILICON FET

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D1004 pdf
TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
(2 pls)
C
E
B 12 3
A
54
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
PIN 1
PIN 3
PIN 5
H
I
FM
K
DT
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
JN
GATE
SOURCE (COMMON)
DIM mm
A 6.35 DIA
B 3.17 DIA
C 18.41
D 5.46
E 5.21
F 7.62
G 21.59
H 3.94
I 12.70
J 0.13
K 24.76
M 2.59
N 4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99



Seme LAB
Seme LAB

D1004 Datasheet Preview

D1004 Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1004 pdf
D1004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 80W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 4A
IDQ = 0.4A
1
3.2
16
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
4 mA
1 µA
7V
S
dB
%
240 pF
120 pF
10 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99


Part Number D1004
Description METAL GATE RF SILICON FET
Maker Seme LAB
Total Page 4 Pages
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