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Sanyo Electric Components Datasheet

J348 Datasheet

P-Channl Silicon MOSFET

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J348 pdf
Ordering number:ENN6421
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
P-Channel Silicon MOSFET
2SJ348
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SJ348]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25˚C
2.55
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–60V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–15A
ID=–15A, VGS=–10V
ID=–15A, VGS=–4V
2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
Ratings
–60
±20
–30
–120
1.75
70
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
–60 V
±20 V
–100 µA
±10 µA
–1.0
–2.0 V
15 25
S
30 40 m
40 55 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2174 No.6421–1/4


Sanyo Electric Components Datasheet

J348 Datasheet

P-Channl Silicon MOSFET

No Preview Available !

J348 pdf
2SJ348
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–30A, VGS=0
Switching Time Test Circuit
VDD=--30V
Vin
0V
--10V
PW=10µs
D.C.1%
Vin
G
ID=--15A
RL=2
D
VOUT
P.G
50
2SJ348
S
Ratings
min typ max
Unit
3800
pF
1200
pF
300 pF
30 ns
150 ns
450 ns
220 ns
–1.0 –1.5 V
ID -- VDS
--50
--4.0V
--40
--3.5V
--30
--20 --3.0V
--10
--2.5V
0
0 --2 --4 --6 --8 --10
Drain-to-Source Voltage, VDS – V IT00671
20 yfs-- ID
7 VDS=--10V
5
3
2
Tc=--25°C
10 75°C 25°C
7
5
3
2
1.0
3
5 7 --1.0
2 3 5 7 --10
23
Drain Current, ID – A
5 7 --20
IT00673
ID -- VGS
--50
VDS=--10V
--40
25°C
--30
--20
--10
0
0 --1 --2 --3 --4 --5 --6
Gate-to-Source Voltage, VGS – V IT00672
RDS(on) -- VGS
70
Tc=25°C
60 ID=--15A
50
40
30
20
10
0
0 --2 --4 --6 --8 --10 --12 --14
Gate-to-Source Voltage, VGS – V IT00674
No.6421–2/4


Part Number J348
Description P-Channl Silicon MOSFET
Maker Sanyo
Total Page 4 Pages
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