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Sanyo Electric Components Datasheet

C4645 Datasheet

2SC4645

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C4645 pdf
Ordering number:ENN3511A
Features
· Large current capacity (IC=1A).
· High breakdown voltage (VCEO400V).
2SA1785 : PNP Epitaxial Planar Silicon Transistor
2SC4645 : NPN Triple Diffused Planar Silicon Transistor
2SA1785/2SC4645
High Voltage Driver Applications
Package Dimensions
unit:mm
2064A
[2SA1785/2SC4645]
2.5
1.45
6.9
1.0
0.9
1
0.6
0.5
23
0.45
( ) : 2SA1785
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.54
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()300V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE VCE=()10V, IC=()100mA
Gain-Bandwidth Product
fT VCE=()10V, IC=()50mA
Output Capacitance
Cob VCB=()30V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=()200mA, IB=()20mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=()200mA, IB=()20mA
* : The 2SA1785/2SC4465 are classified by 100mA hFE as follows :
Rank
C
D
E
hFE 40 to 80 60 to 120 100 to 200
1 : Emitter
2 : Collector
2.54 3 : Base
SANYO : NMP
Ratings
(–)400
(–)400
(–)5
(–)1
(–)2
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
()1.0 µA
()1.0 µA
40* 200*
(50)70
MHz
(12)8
pF
()1.0 V
()1.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/12894TH AX-8287/5170TA (KOTO) 8-6910 No.3511–1/5


Sanyo Electric Components Datasheet

C4645 Datasheet

2SC4645

No Preview Available !

C4645 pdf
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SA1785/2SC4645
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
ton See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
OUTPUT
RL
+
470µF
VBE=--5V
VCE=150V
10IB1= --10IB2= IC=200mA
RL=750, RB=50, at IC=200mA
(For PNP, the polarity is reversed.)
Ratings
min typ
()400
()400
()5
(0.25)
0.11
(3.0)
4.0
(0.3)
0.65
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
IC -- VBE
--1.0
2SA1785
VCE=--10V
--0.8
--0.6
--0.4
--0.2
0
0
3
2
100
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR04666
hFE -- IC
Ta=75°C
2SA1785
VCE=--10V
25°C
--25°C
10
7
5
3
3 5 7 --10
2 3 5 7 --100 2 3 5 7--1000 2 3
Collector Current, IC – mA
ITR04668
IC -- VBE
1.0
2SC4645
VCE=10V
0.8
0.6
0.4
0.2
0
0
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR04667
hFE -- IC
Ta=75°C
2SC4645
VCE=10V
25°C
--25°C
10
7
5
3
3 5 7 10
2 3 5 7 100 2 3 5 7 1000 2
Collector Current, IC – mA
ITR04669
No.3511–2/5


Part Number C4645
Description 2SC4645
Maker Sanyo
Total Page 5 Pages
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