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Sanyo Electric Components Datasheet

C4520 Datasheet

2SC4520

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C4520 pdf
Ordering number:EN3139
NPN Epitaxial Planar Silicon Transistors
2SC4520
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Package Dimensions
unit:mm
2038A
[2SC4520]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2× 0.8mm)
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Ratings
60
45
5
1.5
3
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=45V, IE=0
VEB=3V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=2V, IC=100mA
VCB=10V, f=1MHz
* : The 2SC4520 is classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400
Marking : CK
hFE rank : R, S, T
Ratings
min typ
100*
40
300
13
max
1
1
400*
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2598HA (KT)/7059MO, TS No.3139–1/4


Sanyo Electric Components Datasheet

C4520 Datasheet

2SC4520

No Preview Available !

C4520 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SC4520
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=800mA, IB=40mA
IC=800mV, IB=40mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Ratings
min typ
0.25
0.9
60
45
5
50
150
180
max
0.7
1.3
100
270
350
Unit
V
V
V
V
V
ns
ns
ns
No.3139–2/4


Part Number C4520
Description 2SC4520
Maker Sanyo
Total Page 4 Pages
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