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STMicroelectronics Electronic Components Datasheet

STAP57100 Datasheet

RF power transistor

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STAP57100 pdf
STAP57100
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RF power transistor the LdmoST family
Preliminary Data
Features
Excellent thermal stability
Common source configuration push-pull
POUT = 100 W with 14 dB gain @ 860 MHz
ST advanced PowerSO-10RF - STAP package
Load mismatch 10:1 all phases
In compliance with the 2002/95/EC european
directive
Description
The STAP57100 is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The STAP57100 is designed for high
gain and broadband performance operating in
common source mode at 28 V.
Figure 1. Pin connection
1
2
4
5
1, 2 Drain
3 Source
4, 5 Gate
3
Table 1.
Device summary
Order code
STAP57100
Package
STAP2
Branding
STAP57100
April 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/8
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STMicroelectronics Electronic Components Datasheet

STAP57100 Datasheet

RF power transistor

No Preview Available !

STAP57100 pdf
Electrical data
1 Electrical data
1.1 Maximum ratings
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TCASE = 25 °C
Table 2. Absolute maximum ratings
Symbol
Parameter
V(BR)DSS
VGS
ID
PDISS
TJ
TSTG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ Tc = 70 °C)
Max. operating junction temperature
Storage temperature
1.2 Thermal data
Table 3. Thermal data
Symbol
Parameter
RthJC
Junction - case thermal resistance
STAP57100
Value
65
± 20
14
190
165
-65 to + 150
Unit
V
V
A
W
°C
°C
Value
0.50
Unit
°C/W
2/8


Part Number STAP57100
Description RF power transistor
Maker ST Microelectronics
Total Page 8 Pages
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