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STMicroelectronics Electronic Components Datasheet

F12NM50N Datasheet

N-channel Power MOSFET

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F12NM50N pdf
STB12NM50N,STD12NM50N,STI12NM50N
STF12NM50N, STP12NM50N
N-channel 500 V, 0.29 , 11 A MDmesh™ II Power MOSFET
TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB12NM50N
t(s)STD12NM50N
cSTI12NM50N
uSTF12NM50N
rodSTP12NM50N
550 V
550 V
550 V
550 V
550 V
0.38
0.38
0.38
0.38
0.38
11 A
11 A
11 A
11 A (1)
11 A
P100% avalanche tested
teLow input capacitance and gate charge
leLow gate input resistance
bsoApplication
- OSwitching applications
t(s)Description
ucThis series of devices is realized with the second
dgeneration of MDmesh™ technology. This
rorevolutionary Power MOSFET associates a new
Pvertical structure to the company’s strip layout to
teyield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB12NM50N
B12NM50N
STD12NM50N
D12NM50N
STI12NM50N
I12NM50N
STF12NM50N
STP12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
I²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
July 2008
Rev 8
1/19
www.st.com
19



STMicroelectronics Electronic Components Datasheet

F12NM50N Datasheet

N-channel Power MOSFET

No Preview Available !

F12NM50N pdf
Contents
Contents
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ct(s5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/19



STMicroelectronics Electronic Components Datasheet

F12NM50N Datasheet

N-channel Power MOSFET

No Preview Available !

F12NM50N pdf
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 / I²PAK
D²PAK / DPAK
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
500 V
VGS Gate-source voltage
± 25 V
ID Drain current (continuous) at TC = 25 °C
11
11(1)
A
)ID
t(sIDM(2)
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
6.7
6.7(1)
A
44
44 (1)
A
ucPTOT
roddv/dt(3)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
100
15
25
W
V/ns
PVISO
leteTstg
soTJ
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
Storage temperature
Max. operating junction temperature
-- 2500
-55 to 150
150
V
°C
°C
b1. Limited only by maximum temperature allowed
O2. Pulse width limited by safe operating area
) -3. ISD 11A, di/dt 400A/µs, VDD =80%V(BR)DSS
t(sTable 3. Thermal data
roducSymbol
Parameter
Value
Unit
TO-220 I²PAK DPAK D²PAK TO-220FP
PRthj-case
leteRthj-amb
Obso Rthj-pcb
Thermal resistance junction-
case max
Thermal resistance junction-amb
max
Thermal resistance junction-pcb
max
1.25
62.5 --
-- -- 50
--
30
5 °C/W
62.5 °C/W
-- °C/W
Tl
Maximum lead temperature for
soldering purposes
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Ias, Vdd=50V)
5A
350 mJ
3/19




Part Number F12NM50N
Description N-channel Power MOSFET
Maker STMicroelectronics
Total Page 19 Pages
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