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STMicroelectronics Electronic Components Datasheet

F11NM60N Datasheet

STF11NM60N

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F11NM60N pdf
STD11NM60N - STD11NM60N-1
STP11NM60N - STF11NM60N
N-channel 600V - 0.37- 10A - TO-220 - TO-220FP- IPAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650V
650V
650V
650V
<0.45
<0.45
<0.45
<0.45
10A
10A
10A (1)
10A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
Marking
D11NM60N
D11NM60N
P11NM60N
F11NM60N
Package
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape & reel
Tube
Tube
November 2006
Rev 2
1/17
www.st.com
17
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STMicroelectronics Electronic Components Datasheet

F11NM60N Datasheet

STF11NM60N

No Preview Available !

F11NM60N pdf
Contents
Contents
STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
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STMicroelectronics Electronic Components Datasheet

F11NM60N Datasheet

STF11NM60N

No Preview Available !

F11NM60N pdf
STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
VISO
Tj
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/µs, VDD =80% V(BR)DSS
Value
TO-220/
Unit
TO-220FP
DPAK/IPAK
600 V
± 25
10 10(1)
6.3 6.3 (1)
40 40(1)
V
A
A
A
100
0.8
15
25
0.2
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
TO-220 DPAK/IPAK TO-220FP Unit
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
Maximum lead temperature for soldering
purpose
1.25
62.5 100
300
5 °C/W
62.5 °C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
3.5
200
Unit
A
mJ
3/17
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Part Number F11NM60N
Description STF11NM60N
Maker ST Microelectronics
Total Page 17 Pages
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