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SFF450Z Datasheet Preview

SFF450Z Datasheet

N-Channel Power MOSFET

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SFF450Z pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF450
__ __ __
│ │ └ Screening 2/ __ = Not Screen
││
││
││
││
TX = TX Level
TXV = TXV Level
S = S Level
│ └ Lead Option 3/ __ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ M = TO-254
Z = TO-254Z
SFF450M
SFF450Z
13 AMP / 500 Volts
0.4 Ω
N-Channel POWER MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals Available for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IRFM450 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Total Device Dissipation
TO-254 (M)
Symbol
VDS
VGS
ID
Top & Tstg
TC = 25ºC
TC = 55ºC
RθJC
PD
TO-254Z (Z)
Value
500
±20
13
-55 to +150
1
125
95
Units
Volts
Volts
Amps
ºC
ºC/W
W
For Pin Out Configuration and Optional Lead Bend, Se Page 3.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00097E
DOC



SSDI
SSDI

SFF450Z Datasheet Preview

SFF450Z Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF450Z pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 μA)
Drain to Source On State Resistance
(VGS=10 V, ID= 7.2 A)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10 V)
Gate Threshold Voltage
(VDS=VGS, ID= 250 μA)
Forward Transconductance
(VDS50 V, IDS= 7.2 A)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
At rated VGS
VGS=10 Volts
80% rated VDS
Rated ID
VDD=50% Rated VDS
50% Rated ID
RG= 6.2Ω
PD= 20 W
TJ=25ºC
IF= Rated ID
di/dt=100A/μsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
SFF450M
SFF450Z
Min
500
––
13
2.0
8.7
––
––
––
––
––
––
––
––
––
––
––
––
280
3.2
––
––
––
Typ
––
0.35
––
––
131
––
––
––
––
83
11
42
18
44
70
40
––
580
6.7
2700
350
75
Max Units
–– Volts
0.40 Ω
–– A
4.0 V
–– mho
250
1000
μA
+100
-100
120
17
64
27
66
100
60
1.4
nA
nC
nsec
V
1200
14
––
––
––
nsec
μC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF450M; SFF450MDB; SFF450MUB;
SFF450Z; SFF450ZDB; SFF450ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00097E
DOC


Part Number SFF450Z
Description N-Channel Power MOSFET
Maker SSDI
Total Page 3 Pages
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