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SFF24N50Z Datasheet Preview

SFF24N50Z Datasheet

N-Channel Power MOSFET

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SFF24N50Z pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF24N50 __ __ __
¦ ¦ + Screening 2/ __ = Not Screen
¦ ¦ TX = TX Level
¦ ¦ TXV = TXV Level
¦¦
¦¦
S = S Level
¦ + Lead Option 3/ __ = Straight Leads
¦ DB = Down Bend
¦ UB = Up Bend
¦
+ Package 3/ M = TO-254
Z = TO-254Z
SFF24N50M
SFF24N50Z
24 AMP / 500 Volts
0.2
N-Channel MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Avalanche Current
Avalanche Energy
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
Symbol
Repetitive
Repetitive
Single Pulse
TC = 25ºC
TC = 55ºC
VDS
VGS
ID
IAR
EAR
EAS
PD
Top & Tstg
RθJC
TO-254Z (Z)
Value
500
±20
24
21
1
690
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
Amps
mJ
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC



SSDI
SSDI

SFF24N50Z Datasheet Preview

SFF24N50Z Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF24N50Z pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=10 Volts
50% rated VDS
50% Rated ID
VDD=50% Rated VDS
50% Rated ID
RG= 6.2
VGS=10 Volts
TJ=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
SFF24N50M
SFF24N50Z
Min
500
––
24
2.0
8
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
––
––
––
12
––
––
––
––
135
28
62
16
33
65
30
––
––
––
4200
450
135
Max Units
–– Volts
0.2
–– A
4.0 V
–– mho
250
1000
µA
+100
-100
180
40
85
30
45
130
40
1.5
nA
nC
nsec
V
500 nsec
–– nC
––
–– pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF24N50M; SFF24N50MDB; SFF24N50MUB;
SFF24N50Z; SFF24N50ZDB; SFF24N50ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC


Part Number SFF24N50Z
Description N-Channel Power MOSFET
Maker SSDI
Total Page 3 Pages
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