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SFF140J Datasheet Preview

SFF140J Datasheet

N-Channel Power MOSFET

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SFF140J pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF140 _J_ __ __
¦ ¦ + Screening 2/ __ = Not Screen
¦ ¦ TX = TX Level
¦ ¦ TXV = TXV Level
¦¦
¦¦
S = S Level
¦ + Lead Option 3/ __ = Cooper Core Alloy Leads
¦ BW = Welded Copper Leads
¦
¦
+ Package: TO-257
SFF140J
SFF140JBW
28 AMP / 100 Volts
0.077
N-Channel
POWER MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IRF140/540 Types
Available with enhanced flexibility Cu pins: SFF140JBW
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Symbol
TC = 25ºC
TC = 55ºC
VDS
VGS
ID
PD
Top & Tstg
RθJC
Value
100
±20
28
62.5
47.5
-55 to +150
2
Units
Volts
Volts
Amps
W
ºC
ºC/W
TO-257
Pin Out:
Pin1: Drain
Pin2: Source
Pin3: Gate
PIN 3
PIN 2
PIN 1
SUFFIX: J
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SUFFIX: JD
SUFFIX: JU
DATA SHEET #: F00029C
DOC



SSDI
SSDI

SFF140J Datasheet Preview

SFF140J Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF140J pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID)
Gate Threshold Voltage
(VDS=VGS, ID= 250µA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=150ºC)
Symbol
BVDSS
RDS(on)1
RAS(on)2
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=10 Volts
60% rated VDS
60% Rated ID
VDD=50% Rated VDS
60% Rated ID
RG= 6.2
VGS=10 Volts
TJ=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
SFF140J
SFF140JBW
Min
100
––
2.0
8.7
––
––
––
––
––
––
––
––
––
––
––
––
––
0.44
––
––
––
Typ
––
0.067
––
2.4
13
––
––
––
––
40
8
19
15
72
40
50
1.3
150
0.91
1750
575
125
Max Units
–– Volts
0.077
0.125
A
4.0 V
–– S(mho)
25
250
µA
+100
-100
75
12
35
23
110
60
75
2.5
nA
nC
nsec
V
400 nsec
1.9 nC
––
–– pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00029C
DOC


Part Number SFF140J
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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