http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Rohm Semiconductor Electronic Components Datasheet

RB088NS100 Datasheet

Schottky Barrier Diode

No Preview Available !

RB088NS100 pdf
Schottky Barrier Diode
RB088NS100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
(2)
RB088
NS100
1
(1) (3)
lLand Size Figure (Unit : mm)
11
9.9
2.5
2.54
LPDS
2.54
ROHM : LPDS
JEITA : TO263S
1 : Manufacture Date
lStructure
(2) Cathode
lTaping Dimensions (Unit : mm)
(1) Anode
(3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=137ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
10
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=5A - - 0.87 V
IR
VR=100V
- - 5 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RB088NS100 Datasheet

Schottky Barrier Diode

No Preview Available !

RB088NS100 pdf
RB088NS100
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10 Tj = 125°C
1
Tj = 75°C
0.1 Tj = 25°C
0.01
Tj = -25°C
0.001
0 200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
1
0.1
0.01
0.001
0
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
Tj = 25°C
f = 1MHz
760
755
750
Tj=25°C
IF=5A
n=30pcs
745
100 740
Ave. : 731.5mV
735
730
725
10
0
720
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A


Part Number RB088NS100
Description Schottky Barrier Diode
Maker Rohm
Total Page 6 Pages
PDF Download
RB088NS100 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 RB088NS100 Schottky Barrier Diode Rohm
Rohm
RB088NS100 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components