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Rohm Semiconductor Electronic Components Datasheet

D1468S Datasheet

2SD1468S

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D1468S pdf
Muting Transistor (15V, 1A)
2SD1468S
Features
1) Low saturation voltage, typically VCE(sat) = 0.08V at
Ic / IB = 500mA / 500A.
2) Ideal for low voltage, high current drives.
3) High DC current gain and high current.
Dimensions (Unit : mm)
SPT
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCES
VEBO
30
15
5
Collector current
IC 1
Collector power dissipation
Junction temperature
PC
Tj
0.3
150
Storage temperature
Tstg 55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min. Typ. Max. Unit
Conditions
30 − − V IC=50μA
15 − − V IC=1mA
5 − − V IE=50μA
− − 0.5 μA VCB=20V
− − 0.5 μA VEB=4V
0.08 0.4
V IC/IB=0.5mA/50mA
120 390 VCE/IC=3V/0.1A
50 150
MHz VCE=5V , IE= −50mA , f=100MHz
15 30 pF VCE=10V , IE=0A , f=1MHz
Packaging specifications and hFE
Type
2SD1468S
Package
hFE
Code
Basic ordering unit (pieces)
SPT
QRS
TP
5000
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

D1468S Datasheet

2SD1468S

No Preview Available !

D1468S pdf
2SD1468S
Electrical characteristics curves
50 140μA
120μA
40 100μA
80μA
30
60μA
20
40μA
10 20μA
IB=0μA
0 Ta=25°C
0 200 400 600 800 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (mV)
Fig.1 Ground emitter output characteristics
10000 Ta=25°C
5000
2000
1000
500
200
100
50
IC/IB=50/1
20
10 20/1
5
10/1
2
1
12
5 10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
10000
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000 Ta=25°C
500
IE=0A
f=1MHz
200
100
50
20
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
1000 Ta=25°C
500 VCE=10V
200
100
50
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation
characteristics
1000 Ta=25°C
500
200
100
50 IC=100mA
20 IC=50mA
10
5 IC=10mA
2 IC=5mA
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10 20
BASE CURRENT : IB(mA)
50 100
Fig.5 Collector-emitter saturation voltage
vs. base current
Ta=25°C
IC=0A
f=1MHz
100
50
20
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Data Sheet
10000
5000
Ta=25°C
2000
1000
500
VCE=3V
200 VCE=1V
100
50
20
10
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
VCE=5V
1000
500
200
100
50
20
10
5
2
1
0.2 0.5 1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
100 Ta=25°C
50
20
10
5
2
1
0.5
0.2
0.1
10 20
50 100 200 500 1000 2000 5000 10000
BASE CURRENT : IB (mA)
Fig.9 "ON" resistance
vs. base current characteristics
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.B


Part Number D1468S
Description 2SD1468S
Maker Rohm
Total Page 4 Pages
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