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Rohm Semiconductor Electronic Components Datasheet

2SD1980 Datasheet

Power Transistor

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2SD1980 pdf
Power Transistor (100V, 2A)
2SD1980
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
inner circuit
C
B
R1 R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
100
Emitter-base voltage
VEBO
6
Collector current
Collector power dissipation
IC
PC
2
3 1
1
10
Junction temperature
Tj 150
Storage temperature
1 Single pulse Pw=100ms
Tstg
55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
°C
°C
Packaging specifications and hFE
Type
2SD1980
Package
CPT3
hFE 1k to 10k
Marking
Code
TL
Basic ordering unit (pieces)
2500
Denotes hFE
Dimensions (Unit : mm)
2SD1980
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
ROHM : CPT3
EIAJ : SC-63
0.5
1.0
(1) Base
(2) Collector
(3) Emitter
Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
100
100
6
1000
Typ.
80
25
Max.
10
3
1.5
2.0
10000
Unit
V
V
V
μA
mA
V
V
MHz
pF
Conditions
IC = 50μA
IC = 5mA
IE = 5mA
VCB = 100V
VEB = 5V
IC = 1A , IB = 1mA
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1/2
2012.01 - Rev.D


Rohm Semiconductor Electronic Components Datasheet

2SD1980 Datasheet

Power Transistor

No Preview Available !

2SD1980 pdf
2SD1980
Electrical characteristic curves
2.0 Ta=25°C
1.6
1.2
1mA
00..89mmAA
0.7mA
0.6mA
0.5mA
0.4mA
0.8 IB=0.3mA
0.4
0
012 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
Data Sheet
10
5
VCE=2V
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation
characteristics
10000 Ta=25°C
5000
2000
1000
500
VCE=4V
2V
200
100
50
20
10
0.001
0.01
0.1
1 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
10000
5000
VCE=2V
2000
1000
500
200
100
50
20
10
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current
100 Ta=25°C
50
20
10
5
IC/IB=1000
2
1 500
0.5
0.2
0.1
0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2
5
COLLECTOR CURRENT : IC (A)
10
Fig.5 Collector-emitter saturation voltage
vs.collector current
100
IC/IB=1000
50
20
10
5
2 Ta=25°C
25°C
1
0.5 100°C
0.2
0.1
0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2
5
COLLECTOR CURRENT : IC (A)
10
Fig.6 Collector-emitter saturation voltage
vs.collector current
1000
500
200
100
50
fT=a1=M2H5°zC
IE=0A
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
2/2
2012.01 - Rev.D


Part Number 2SD1980
Description Power Transistor
Maker Rohm
Total Page 3 Pages
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