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Renesas Electronics Components Datasheet

RJK0852DPB Datasheet

Silicon N Channel Power MOS FET

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RJK0852DPB pdf
RJK0852DPB
80V, 30A, 12mmax.
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0080EJ0200
Rev.2.00
Apr 09, 2013
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4 1, 2, 3 Source
G 4 Gate
5 Drain
SSS
123
Applications
Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
80
20
30
120
30
15
30
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive (10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0080EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6


Renesas Electronics Components Datasheet

RJK0852DPB Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

RJK0852DPB pdf
RJK0852DPB
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
80
1.2
Typ
9
10
50
4150
417
164
0.4
28
13
7.6
11
5.4
56
8.2
0.83
38
Max
0.1
1
2.5
12
14
1.1
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = 80 V, VGS = 0 V
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 25 V, VGS = 4.5 V,
ID = 30 A
VGS = 10 V, ID = 15 A,
VDD 30 V, RL = 2 ,
Rg = 4.7
IF = 30 A, VGS = 0 V Note4
IF = 30 A, VGS = 0 V
diF/ dt = 100 A/ s
R07DS0080EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6


Part Number RJK0852DPB
Description Silicon N Channel Power MOS FET
Maker Renesas Technology
Total Page 7 Pages
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