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Panasonic Electronic Components Datasheet

2SD2000 Datasheet

Silicon NPN triple diffusion planar type(For power switching)

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2SD2000 pdf
Power Transistors
2SD2000
Silicon NPN triple diffusion planar type
For power switching
s Features
q High-speed switching
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector power dissipation PC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
80
60
6
8
4
1
35
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VBE(sat)
VCE(sat)
fT
ton
tstg
tf
VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 4A
VCE = 4V, IC = 4A
IC = 4A, IB = 0.4A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
60 V
70 250
20
2.0 V
1.5 V
80 MHz
0.3 µs
1.0 µs
0.2 µs
1


Panasonic Electronic Components Datasheet

2SD2000 Datasheet

Silicon NPN triple diffusion planar type(For power switching)

No Preview Available !

2SD2000 pdf
Power Transistors
40
(1)
35
30
25
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
15
(2)
10
(3)
5
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
1 TC=–25˚C
0.3 25˚C
100˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
100
10
1
1 3 10 30 100 300 1000
Collector to base voltage VCB (V)
IC — VCE
4
IB=40mA TC=25˚C
35mA
3 30mA
25mA
20mA
2 15mA
10mA
1 5mA
0
012345678
Collector to emitter voltage VCE (V)
2SD2000
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1 25˚C
0.03
TC=100˚C
–25˚C
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
104
VCE=4V
103
TC=100˚C
102
25˚C
–25˚C
1000
100
10
fT — IC
VCE=12V
f=10MHz
TC=25˚C
10 1
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2)
VCC=50V
10 TC=25˚C
tstg
1
ton
0.1 tf
0.01
0
1234567
Collector current IC (A)
8
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
t=1ms
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SD2000
Description Silicon NPN triple diffusion planar type(For power switching)
Maker Panasonic Semiconductor
Total Page 3 Pages
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