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Panasonic Electronic Components Datasheet

2SD1985A Datasheet

Silicon NPN triple diffusion planar type(For power amplification)

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2SD1985A pdf
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
Collector to 2SD1985
base voltage 2SD1985A
VCBO
60
80
V
1.3±0.2
1.4±0.1
Collector to 2SD1985
emitter voltage 2SD1985A
VCEO
60
80
V
0.8±0.1
0.5 +0.2
–0.1
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
6
5
3
25
2
150
–55 to +150
V
A
A
W
˚C
˚C
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SD1985
current
2SD1985A
Collector cutoff
2SD1985
current
2SD1985A
Emitter cutoff current
Collector to emitter 2SD1985
voltage
2SD1985A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
200
µA
200
300
µA
300
1 mA
60
V
80
70 250
10
1.8 V
1.2 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
1


Panasonic Electronic Components Datasheet

2SD1985A Datasheet

Silicon NPN triple diffusion planar type(For power amplification)

No Preview Available !

2SD1985A pdf
Power Transistors
PC — Ta
40
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
30
(1)
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
5
TC=25˚C
4
IB=100mA
90mA
80mA
3
70mA
60mA
50mA
40mA
2 30mA
20mA
1 10mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1985, 2SD1985A
IC — VBE
8
7
25˚C
6
5 TC=100˚C –25˚C
VCE=4V
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=8
30
10
3 TC=100˚C
25˚C
1
0.3 –25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=4V
300 TC=100˚C
100
–25˚C
30
10
25˚C
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=5V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
–10
ICP
–3 IC
–1
– 0.3
– 0.1
Non repetitive pulse
TC=25˚C
t=1ms
DC
10ms
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100 (1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Part Number 2SD1985A
Description Silicon NPN triple diffusion planar type(For power amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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