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Panasonic Electronic Components Datasheet

2SB0931 Datasheet

Power Transistors

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2SB0931 pdf
Power Transistors
2SB0931 (2SB931)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For Power switching
Complementary to 2SD1254
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
130
80
7
3
6
30
1.3
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
VBE(sat)
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −100 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = − 0.5 A
IC = −2 A, IB = − 0.1 A
IC = −2 A, IB = − 0.1 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
IC = − 0.5 A,
IB1 = −50 mA, IB2 = 50 mA
VCC = −50 V
80
45
90
V
10 µA
50 µA
260
1.5 V
0.5 V
30 MHz
0.3 µs
1.1 µs
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00013BED
1



Panasonic Electronic Components Datasheet

2SB0931 Datasheet

Power Transistors

No Preview Available !

2SB0931 pdf
2SB0931
40
(1)
30
PC Ta
(1)TC = Ta
(2)With a 50 mm × 50 mm × 2 mm
Al heat sink
(3)Without heat sink
(PC = 1.3 W)
20
10
(2)
(3)
0
0 40 80 120 160
Ambient temperature Ta (°C)
VBE(sat) IC
100
IC / IB = 20
10
1
0.1
TC = −100°C
25°C
25°C
IC VCE
6
TC = 25°C
5
IB = −100 mA
4
80 mA
60 mA
3 40 mA
30 mA
2 20 mA
16 mA
1 12 mA
8 mA
4 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC / IB = 20
10
1
0.1
TC = 100°C
25°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
hFE IC
fT IC
104
VCE = −2 V
104
VCE = −10 V
f = 10 MHz
TC = 25°C
103 103
TC = 100°C 25°C
102
25°C
102
10 10
0.01
0.01
0.1
1
Collector current IC (A)
10
1
0.01
0.1
1
Collector current IC (A)
10
1
0.01
0.1
1
Collector current IC (A)
10
Cob VCB
104
IE = 0
f = 1 MHz
TC = 25°C
103
102
10
ton, tstg, tf IC
100 Pulsed tw = 1 ms
Duty cycle = 1%
IC / IB = 10
(IB1 = IB2)
10
VCC = −50 V
Ta = 25°C
1
tstg
ton
0.1 tf
Safe operation area
100
Non repetitive pulse
TC = 25°C
10 ICP
IC
t = 10 ms
1
t = 300 ms
0.1
t = 0.5 ms
t = 1 ms
1
0.1
1
10 100
Collector-base voltage VCB (V)
0.01
0
0.8 1.6 2.4 3.2
Collector current IC (A)
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2 SJD00013BED



Panasonic Electronic Components Datasheet

2SB0931 Datasheet

Power Transistors

No Preview Available !

2SB0931 pdf
Rth - t
103 (1)Without heat sink
(2)With a 50 mm × 50 mm × 2 mm Al heat sink
102 (1)
(2)
10
1
101
102
104
103
102
101
1
10 102 103 104
Time t (s)
2SB0931
SJD00013BED
3




Part Number 2SB0931
Description Power Transistors
Maker Panasonic Semiconductor
Total Page 4 Pages
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