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2SA1961 Datasheet

Silicon PNP epitaxial planer type

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2SA1961 pdf
Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
s Features
q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–200
V
Collector to emitter voltage VCEO
–200
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
– 0.1
A
Collector current IC –70 mA
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*1
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
30
V
V
150 –
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–2.5 V
Transition frequency fT VCB = –5V, IE = 10mA, f = 200MHz 30 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
7 pF
*1hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
1


Panasonic Electronic Components Datasheet

2SA1961 Datasheet

Silicon PNP epitaxial planer type

No Preview Available !

2SA1961 pdf
Transistor
PC — Ta
2.0
Printed circut board: Copper
foil area of 1cm2 or more, and
1.6
the board thickness of 1.7mm
for the collector portion.
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–120
IC — VCE
Ta=25˚C
–100
–80
–60
–40
–20
IB=–1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1961
–120
–100
–80
IC — VBE
VCE=–10V
25˚C
Ta=75˚C
–25˚C
–60
–40
–20
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
–10
–3
–1
– 0.3
– 0.1
VCE(sat) — IC
IC/IB=10
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
240
VCE=–10V
210
180
150
Ta=75˚C
120
25˚C
90
–25˚C
60
30
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
2


Part Number 2SA1961
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor
Total Page 2 Pages
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