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Panasonic Electronic Components Datasheet

2SA1323 Datasheet

Silicon PNP epitaxial planer type

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2SA1323 pdf
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
s Features
q Allowing supply with the radial taping.
q High transition frequency fT.
q Optimum for high-density mounting.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–60
–30
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
ICEO
IEBO
hFE*
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
– 0.1 µA
–100 µA
–10 µA
70 220
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1
V
Base to emitter voltage
VBE VCE = –10V, IC = –1mA
– 0.7
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
2.8 4.0 dB
22 50
Common emitter reverse transfer capacitanse Cre
VCE = –10V, IC = –1mA, f = 10.7MHz
1.2 2.0 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1


Panasonic Electronic Components Datasheet

2SA1323 Datasheet

Silicon PNP epitaxial planer type

No Preview Available !

2SA1323 pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
5
f=1MHz
IE=0
Ta=25˚C
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–24
Ta=25˚C
–20 IB=–250µA
–200µA
–16
–150µA
–12
–100µA
–8
–50µA
–4
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–120
–100
–80
–60
hFE — IC
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–40
–20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cre — VCE
6
IC=–1mA
f=10.7MHz
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
2SA1323
IC — VBE
–60
VCE=–10V
–50
–40
25˚C
Ta=75˚C –25˚C
–30
–20
–10
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
400
Ta=25˚C
350 VCB=–10V
300
250
200
150
100
50
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
PG — IC
24
VCE=–10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
2


Part Number 2SA1323
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor
Total Page 3 Pages
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