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Panasonic Electronic Components Datasheet

2SA0838 Datasheet

Silicon PNP epitaxial planar type Transistors

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2SA0838 pdf
Transistors
2SA0838 (2SA838)
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC1359
Features
High transfer ratio fT
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
250
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Base-emitter saturation voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common-emitter)
VBE
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
NF
Zrb
Cre
VCE = −10 V, IC = −1 mA
VCB = −10 V, IE = 0
VCE = −20 V, IB = 0
VEB = −5 V, IC = 0
VCE = 10 V, IC = 1 mA
IC = −10 mA, IB = −1 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 1 mA, f = 5 MHz
VCE = −10 V, IC = −1 mA, f = 2 MHz
VCE = −10 V, IC = −1 mA, f = 10.7 MHz
70
150
0.7
0.1
300
2.8
22
1.2
0.1
100
10
220
4.0
50
2.0
V
µA
µA
µA
V
MHz
dB
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 140
110 to 220
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00005BED
1


Panasonic Electronic Components Datasheet

2SA0838 Datasheet

Silicon PNP epitaxial planar type Transistors

No Preview Available !

2SA0838 pdf
2SA0838
PC Ta
500
400
300
200
100
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
IC VCE
30
Ta = 25°C
25
20 IB = −250 µA
200 µA
15
150 µA
10 100 µA
5 50 µA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
0.1
Ta = 75°C
25°C
25°C
0.01
0.1
1
10 100
Collector current IC (mA)
120
100
80
60
hFE IC
VCE = −10 V
Ta = 75°C
25°C
25°C
40
20
0
0.1
1
10 100
Collector current IC (mA)
Cob VCB
6 f = 1 MHz
IE = 0
5 Ta = 25°C
4
3
2
1
0
0.1
1
10 100
Collector-base voltage VCB (V)
Cre VCE
5
IC = −1 mA
f = 10.7 MHz
Ta = 25°C
4
3
2
1
0
1 10 100
Collector-emitter voltage VCE (V)
fT IE
600
VCB = −10 V
Ta = 25°C
500
400
300
200
100
0
0.1 1 10 100
Emitter current IE (mA)
GP IC
24
VCE = −10 V
f = 100 MHz
20 Ta = 25°C
16
12
8
4
0
0.1
1
10 100
Collector current IC (mA)
NF IE
5
VCB = −10 V
f = 100 MHz
Ta = 25°C
4
3
2
1
0
0.1 1 10
Emitter current IE (mA)
2 SJC00005BED


Part Number 2SA0838
Description Silicon PNP epitaxial planar type Transistors
Maker Panasonic
Total Page 3 Pages
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