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  ON Semiconductor Electronic Components Datasheet  

DTA114GE Datasheet

General Purpose Transistor

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DTA114GE pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistor
PNP Bipolar Junction Transistor
with a 10 kW Base–Emitter Resistor
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
RqJA
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
Value
50
50
5.0
100
20
150
78
833
–55 to 150
Unit
V
V
V
mA
mA
mW
mW
°C/W
°C
DTA114GE
50 Volts
100 mAmps
150 mW
3
2
1
CASE 463–01
SOT–416/SC–90
BASE (1)
RBE
RBE = 10 kW
COLLECTOR (3)
EMITTER (2)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 µAdc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Emitter Breakdown Voltage
m(IE = 720 Adc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0 Adc)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0 Adc)
BVCBO
Vdc
50 — —
BVCEO
Vdc
50 — —
BVEBO
Vdc
5.0 — —
ICBO
mAdc
— 0.5
IEBO
mAdc
300 — 580
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 5.0 mAdc)
Collector–Emitter Saturation Voltage
m(IC = 10 mAdc, IB = 500 Adc)
hFE
VCE(sat)
30
——
Vdc
— 0.3
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
©MMoototorroollaa, ISncm. 1a9l9l–8Signal Transistors, FETs and Diodes Device Data
1


  ON Semiconductor Electronic Components Datasheet  

DTA114GE Datasheet

General Purpose Transistor

No Preview Available !

DTA114GE pdf
DTA114GE
TYPICAL ELECTRICAL CHARACTERISTICS
0.4 0.18
0.3
0.2
100 mA
50 mA
0.1
10 mA
IC = 1.0 mA
0
0.01 0.1
1.0
IB, BASE CURRENT (mA)
10
100
Figure 1. Collector–Emitter Saturation Voltage
IC/IB = 10
0.12
0.06
T = 85°C
25°C
0°C
0
1.0 10
IC, COLLECTOR CURRENT (mA)
100
Figure 2. Collector–Emitter Saturation Voltage
1.0
VBE(sat)
0.1
0.01
1.0
VCE(sat)
IC/IB = 10
10
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
1000
VCE = 1.0 V
25°C
150°C
100
–40°C
10
1.0
10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
1000
VCE = 5.0 V
25°C
100
150°C
–40°C
1000
10
1.0
10 100
IC, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
1000
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number DTA114GE
Description General Purpose Transistor
Maker ON Semiconductor
Total Page 6 Pages
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