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  ON Semiconductor Electronic Components Datasheet  

D45H11 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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D45H11 pdf
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D44H Series (NPN),
D45H Series (PNP)
Preferred Devices
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
VCEO
Vdc
60
80
Emitter Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
VEB 5.0 Vdc
IC Adc
10
20
Total Power Dissipation
@ TC = 25°C
@ TA = 25°C
PD W
70
2.0
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.8 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
TL
275 _C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 9
1
http://onsemi.com
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
4 MARKING
DIAGRAM
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
D4xHyyG
AYWW
D4xHyy
A
Y
WW
G
= Device Code
x = 4 or 5
yy = 8 or 11
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
D44H8
Package
TO−220
Shipping
50 Units/Rail
D44H8G
D44H11
TO−220
(Pb−Free)
TO−220
50 Units/Rail
50 Units/Rail
D44H11G
TO−220
(Pb−Free)
50 Units/Rail
D45H8
D45H8G
D45H11
TO−220
TO−220
(Pb−Free)
TO−220
50 Units/Rail
50 Units/Rail
50 Units/Rail
D45H11G
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
D44H/D


  ON Semiconductor Electronic Components Datasheet  

D45H11 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

D45H11 pdf
D44H Series (NPN),
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min
Typ
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 mAdc, IB = 0 Adc)
D44H8, D45H8 VCEO(sus)
D44H11, D45H11
60
80
− Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Rated VCEO, VBE = 0)
ICES
− 10 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
− 10 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 1.0 Vdc, IC = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 1.0 Vdc, IC = 4.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
hFE
60
40
VCE(sat)
Vdc
− 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8.0 Adc, IB = 0.8 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
VBE(sat)
− 1.5 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, ftest = 1.0 MHz)
Ccb pF
D44H Series
90
D45H Series
160
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
fT MHz
D44H Series
− 50 −
D45H Series
− 40 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING TIMES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay and Rise Times
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5.0 Adc, IB1 = 0.5 Adc)
td + tr
ns
D44H Series
− 300 −
D45H Series
− 135 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
D44H Series
D45H Series
ts
ns
− 500 −
− 500 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
D44H Series
D45H Series
tf
ns
− 140 −
− 100 −
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2


Part Number D45H11
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker ON Semiconductor
Total Page 5 Pages
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