http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



  ON Semiconductor Electronic Components Datasheet  

2N6285 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6285 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMonolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ,Tstg
2N6282 2N6283 2N6284
2N6285 2N6286 2N6287
60 80 100
60 80 100
5.0
20
40
0.5
160
0.915
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
RθJC
Max Unit
1.09 _C/W
* Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by 2N6282/D
2NN6PN282
thru
2N6284*
PNP
2N6285
thru
2N6287*
*Motorola Preferred Device
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
1



  ON Semiconductor Electronic Components Datasheet  

2N6285 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6285 pdf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N6282 thru 2N6284 2N6285 thru 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
VCEO(sus)
60
80
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
ICEO
mAdc
— 1.0
— 1.0
— 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
mAdc
— 0.5
— 5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
— 2.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, VCE = 3.0 Vdc)
hFE —
750 18,000
100 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
2.0
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(on)
VBE(sat)
2.8 Vdc
4.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of Common Emitter Small–Signal Short–Circuit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎForward Current Transfer Ratio
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
|hfe|
2N6282,83,84
2N6285,86,87
Cob
4.0 — MHz
pF
— 400
— 600
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
hfe 300 — —
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
– 30 V
D1 MUST BE FAST RECOVERY TYPE e.g.,
[1N5825 USED ABOVE IB 100 mA
[MSD6100 USED BELOW IB 100 mA
RC
SCOPE
TUT
V2 RB
APPROX
+ 8.0 V
0
51 D1
[ [8.0 k 50
V1
APPROX 25 µs
v– 12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
Figure 2. Switching Times Test Circuit
10
7.0 ts
5.0
2N6282/84 (NPN)
2N6285/87 (PNP)
3.0
2.0
tf tr
1.0
0.7
0.5
0.3 VCC = 30 Vdc
0.2
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
0.2 0.3 0.5 0.7
1.0
td @ VBE(off) = 0 V
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
20
2 Motorola Bipolar Power Transistor Device Data



  ON Semiconductor Electronic Components Datasheet  

2N6285 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6285 pdf
2N6282 thru 2N6284 2N6285 thru 2N6287
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
RθJC(t) = r(t) RθJC
RθJC = 1.09°C/W MAX
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
100 200 300 500 1000
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
1.0 TJ = 200°C
0.5
dc
0.1 ms
50
0.1 ms
20 0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0 dc
1.0 TJ = 200°C
0.5
50
0.1 ms
20 0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0 dc
1.0 TJ = 200°C
0.5
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6282, 2N6285
Figure 6. 2N6283, 2N6286
Figure 7. 2N6284, 2N6287
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
10,000
5000
2000
1000
500
200
100
50
20
10
1.0
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
2N6282/84 (NPN)
2N6285/87 (PNP)
2.0 5.0 10
20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 8. Small–Signal Current Gain
1000
TJ = 25°C
700
500
300
200
100
0.1 0.2
Cib
Cob
2N6282/84 (NPN)
2N6285/87 (PNP)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3




Part Number 2N6285
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Maker ON Semiconductor
Total Page 6 Pages
PDF Download
2N6285 pdf
Download PDF File
2N6285 pdf
View for Mobile






Related Datasheet

1 2N628 Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
New Jersey Semiconductor
2N628 pdf
2 2N6280 NPN POWER TRANSISTORS New Jersey Semi-Conductor
New Jersey Semi-Conductor
2N6280 pdf
3 2N6280 NPN Transistor SSDI
SSDI
2N6280 pdf
4 2N6281 NPN POWER TRANSISTORS New Jersey Semi-Conductor
New Jersey Semi-Conductor
2N6281 pdf
5 2N6281 NPN Transistor SSDI
SSDI
2N6281 pdf
6 2N6282 POWER TRANSISTORS(20A/160W) Mospec Semiconductor
Mospec Semiconductor
2N6282 pdf
7 2N6282 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ON Semiconductor
ON Semiconductor
2N6282 pdf
8 2N6282 DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS Boca Semiconductor Corporation
Boca Semiconductor Corporation
2N6282 pdf
9 2N6282 (2N6282 - 2N6287) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
Motorola
2N6282 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components