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  ON Semiconductor Electronic Components Datasheet  

2N6282 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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2N6282 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMonolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ,Tstg
2N6282 2N6283 2N6284
2N6285 2N6286 2N6287
60 80 100
60 80 100
5.0
20
40
0.5
160
0.915
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
RθJC
Max Unit
1.09 _C/W
* Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by 2N6282/D
2NN6PN282
thru
2N6284*
PNP
2N6285
thru
2N6287*
*Motorola Preferred Device
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
1


  ON Semiconductor Electronic Components Datasheet  

2N6282 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6282 pdf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N6282 thru 2N6284 2N6285 thru 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
VCEO(sus)
60
80
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
ICEO
mAdc
— 1.0
— 1.0
— 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
mAdc
— 0.5
— 5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
— 2.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, VCE = 3.0 Vdc)
hFE —
750 18,000
100 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
2.0
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(on)
VBE(sat)
2.8 Vdc
4.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of Common Emitter Small–Signal Short–Circuit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎForward Current Transfer Ratio
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
|hfe|
2N6282,83,84
2N6285,86,87
Cob
4.0 — MHz
pF
— 400
— 600
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
hfe 300 — —
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
– 30 V
D1 MUST BE FAST RECOVERY TYPE e.g.,
[1N5825 USED ABOVE IB 100 mA
[MSD6100 USED BELOW IB 100 mA
RC
SCOPE
TUT
V2 RB
APPROX
+ 8.0 V
0
51 D1
[ [8.0 k 50
V1
APPROX 25 µs
v– 12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
Figure 2. Switching Times Test Circuit
10
7.0 ts
5.0
2N6282/84 (NPN)
2N6285/87 (PNP)
3.0
2.0
tf tr
1.0
0.7
0.5
0.3 VCC = 30 Vdc
0.2
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
0.2 0.3 0.5 0.7
1.0
td @ VBE(off) = 0 V
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
20
2 Motorola Bipolar Power Transistor Device Data


Part Number 2N6282
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Maker ON Semiconductor
Total Page 6 Pages
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