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  ON Semiconductor Electronic Components Datasheet  

2N6283 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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2N6283 pdf
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ON Semiconductort
Darlington Complementary
Silicon Power Transistors
. . . designed for generalpurpose amplifier and lowfrequency
switching applications.
High DC Current Gain @ IC = 10 Adc
hFE = 2400 (Typ) 2N6284
= 4000 (Typ) 2N6287
CollectorEmitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbo
l
2N6283
2N6286
2N6284
2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitterBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO
VCB
VEB
IC
80 100
80 100
5.0
20
40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC =
25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
0.5
160
0.915
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ,Tstg
65 to + 200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
Symbol
RθJC
Max
1.09
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
160
140
120
100
80
60
40
20
0
0
© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 2
25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
1
NPN
2N6283
2N6284
PNP
2N6286
2N6287
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
160 WATTS
CASE 107
TO204AA
(TO3)
Publication Order Number:
2N6284/D



  ON Semiconductor Electronic Components Datasheet  

2N6283 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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2N6283 pdf
2N6283 2N6284 2N6286 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
2N6283, 2N6286
2N6284, 2N6287
VCEO(sus)
80
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEO
ICEX
mAdc
1.0
1.0
mAdc
0.5
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
750 18,000
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =10Adc,IB =40mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
2.0
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 200 mAdc)
VBE(on) 2.8 Vdc
VBE(sat) 4.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMagnitude of Common Emitter SmallSignal ShortCircuit
Forward Current Transfer Ratio
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
|hfe|
2N6283, 2N6284
2N6286, 2N6287
Cob
4.0 MHz
pF
400
600
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmallSignal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
hfe 300 − −
(1) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2%
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  ON Semiconductor Electronic Components Datasheet  

2N6283 Datasheet

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

2N6283 pdf
2N6283 2N6284 2N6286 2N6287
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
− 30 V
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
RC
SCOPE
TUT
V2 RB
APPROX
+ 8.0 V
0
51 D1
[ 8.0 k [ 50
V1
APPROX
− 12 V
25 μs
tr, tf v 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
Figure 2. Switching Times Test Circuit
10
7.0 ts
5.0
2N6284 (NPN)
2N6287 (PNP)
3.0
2.0
tf tr
1.0
0.7
0.5
0.3 VCC = 30 Vdc
0.2 IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
0.2 0.3 0.5 0.7
1.0
td @ VBE(off) = 0 V
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
20
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
RθJC(t) = r(t) RθJC
RθJC = 1.09°C/W MAX
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30
Figure 4. Thermal Response
50
100 200 300 500 1000
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Part Number 2N6283
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Maker ON Semiconductor
Total Page 7 Pages
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