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  ON Semiconductor Electronic Components Datasheet  

2N6111 Datasheet

Complementary Silicon Plastic Power Transistors

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2N6111 pdf
2N6107, 2N6109, 2N6111 (PNP),
2N6288, 2N6292 (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO
30
50
70
Vdc
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCB Vdc
40
60
80
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VEB 5.0 Vdc
IC 7.0 Adc
ICM 10 Adc
IB 3.0 Adc
PD
40 W
0.32 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
3.125
Unit
_C/W
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7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
2N6xxxG
AYWW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 11
1
2N6xxx = Specific Device Code
xxx = See Table on Page 4
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
Publication Order Number:
2N6107/D



  ON Semiconductor Electronic Components Datasheet  

2N6111 Datasheet

Complementary Silicon Plastic Power Transistors

No Preview Available !

2N6111 pdf
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO(sus)
30
50
70
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N6111, 2N6288
(VCE = 40 Vdc, IB = 0)
2N6109
(VCE = 60 Vdc, IB = 0)
2N6107, 2N6292
ICEO
mAdc
1.0
1.0
1.0
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6107, 2N6292
ICEX
− 100 mAdc
− 100
− 100
− 2.0 mAdc
− 2.0
− 2.0
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
1.0
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc)
All Devices
hFE
30 150
30 150
30 150
2.3 −
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
Base−Emitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VCE(sat)
VBE(on)
Vdc
3.5
Vdc
3.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
2N6288, 2N6292
2N6107, 2N6109, 2N6111
fT MHz
4.0 −
10 −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob pF
− 250
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
hfe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT = |hfe| ftest
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2



  ON Semiconductor Electronic Components Datasheet  

2N6111 Datasheet

Complementary Silicon Plastic Power Transistors

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2N6111 pdf
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+ 30 V
25 ms
+11 V
RC
SCOPE
RB
0
51 D1
- 9.0 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
- 4 V
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
Figure 2. Switching Time Test Circuit
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07 0.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) 5.0 V
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
5.0 7.0
1.0
0.7
0.5 D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02 0.05 0.1
0.2
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 4. Thermal Response
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 200
500 1.0 k
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3




Part Number 2N6111
Description Complementary Silicon Plastic Power Transistors
Maker ON Semiconductor
Total Page 5 Pages
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