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  ON Semiconductor Electronic Components Datasheet  

2N5631 Datasheet

POWER TRANSISTORS COMPLEMENTARY SILICON

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2N5631 pdf
ON Semiconductort
High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
High Collector Emitter Sustaining Voltage –
VCEO(sus) = 140 Vdc
High DC Current Gain – @ IC = 8.0 Adc
hFE = 15 (Min)
Low Collector–Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
Collector Current – Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO
VCB
VEB
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current – Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Value
140
140
7.0
16
20
5.0
200
1.14
–65 to +200
Max
0.875
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
200
150
100
NPN
2N5631
PNP
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
50
0
0 20 40 60 80 100 120 140 160 180 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1
Publication Order Number:
2N5631/D



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2N5631 Datasheet

POWER TRANSISTORS COMPLEMENTARY SILICON

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2N5631 pdf
2N5631 2N6031
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (2)
(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 70 Vdc, IB = 0)
Symbol
VCEO(sus)
ICEO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(IC = 8 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 16 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =10Adc,IB =1.0Adc)
(IC = 16 Adc, IB = 4.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =10Adc,IB =1.0Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain – Bandwidth Product (3)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
2N5631
2N6031
fT
Cob
hfe
Min
140
15
4.0
1.0
15
Max Unit
Vdc
mAdc
2.0
mAdc
2.0
7.0
2.0 mAdc
5.0 mAdc
60
Vdc
1.0
2.0
1.8 Vdc
1.5 Vdc
500
1000
MHz
pF
(1) Pulse Test: Pulse Width v300 µs, Duty Cycle w 2.0%.
(2) fT = |hfe| ftest
VCC
+ā30 V
+11 V
0
25 µs
RB
RC
SCOPE
-9.0 V
51 D1
tr, tf 10 ns
DUTY CYCLE = 1.0%
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
ă1N5825 USED ABOVE IB 100 mA
ăMSD6100 USED BELOW IB 100 mA
For PNP test circuit, reverse all polarities and D1.
Figure 2. Switching Times Test Circuit
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.2 0.3
TJ = 25°C
IC/IB = 10
VCE = 30 V
tr
td @ VBE(off) = 5.0 V
2N5631
2N6031
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
20
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  ON Semiconductor Electronic Components Datasheet  

2N5631 Datasheet

POWER TRANSISTORS COMPLEMENTARY SILICON

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2N5631 pdf
2N5631 2N6031
1.0
0.5 D = 0.5
0.2
0.2
0.1
0.1 0.05
0.05
0.02 SINGLE PULSE
0.02
0.01
0.01
0.02
0.05 0.1 0.2
0.5
θJC(t) = r(t) θJC
P(pk)
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10
t, TIME (ms)
20
50 100 200
Figure 4. Thermal Response
500 1000 2000
20
5.0Ăms 1.0Ăms
10
7.0 dc
5.0 0.5Ăms
3.0 TJ = 200°C
50Ăms
2.0 SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
1.0 THERMALLY LIMITED @ TC = 25°C
0.7
0.5
CURVES APPLY BELOW
RATED VCEO
0.3
0.2
2.0 3.0 5.0 7.0 10
2N5631, 2N6031
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
NPN
2N5631
5.0
3.0
2.0
ts
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
PNP
2N6031
4.0
3.0
2.0
1.0
TJ = 25°C
ts
IB1 = IB2
IC/IB = 10
VCE = 30 V
1.0
0.7 tf
0.6
0.4
0.3 tf
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.2 0.3
Figure 6. Turn–Off Time
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
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Part Number 2N5631
Description POWER TRANSISTORS COMPLEMENTARY SILICON
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