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NXP Semiconductors Electronic Components Datasheet

PMN25EN Datasheet

6.2A N-channel Trench MOSFET

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PMN25EN pdf
PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
Rev. 1 — 29 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 6.2 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 6.2 A
- 20 23 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
S
017aaa253


NXP Semiconductors Electronic Components Datasheet

PMN25EN Datasheet

6.2A N-channel Trench MOSFET

No Preview Available !

PMN25EN pdf
NXP Semiconductors
PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN25EN
TSOP6
4. Marking
Description
plastic surface-mounted package (TSOP6); 6 leads
Table 4. Marking codes
Type number
PMN25EN
Marking code
T8
Version
SOT457
PMN25EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 August 2011
© NXP B.V. 2011. All rights reserved.
2 of 17


Part Number PMN25EN
Description 6.2A N-channel Trench MOSFET
Maker NXP Semiconductors
Total Page 17 Pages
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