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PMN20EN Datasheet

6.7A N-channel Trench MOSFET

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PMN20EN pdf
PMN20EN
30 V, 6.7 A N-channel Trench MOSFET
Rev. 1 — 30 May 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 6.7 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 6.7 A
- 16 20 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
mbb076 S


NXP Semiconductors Electronic Components Datasheet

PMN20EN Datasheet

6.7A N-channel Trench MOSFET

No Preview Available !

PMN20EN pdf
NXP Semiconductors
PMN20EN
30 V, 6.7 A N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN20EN
TSOP6
4. Marking
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Table 4. Marking codes
Type number
PMN20EN
5. Limiting values
Marking code
SK
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- 30 V
-20 20 V
- 6.7 A
- 4.5 A
- 27 A
- 545 mW
- 1390 mW
- 4170 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMN20EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 May 2011
© NXP B.V. 2011. All rights reserved.
2 of 15


Part Number PMN20EN
Description 6.7A N-channel Trench MOSFET
Maker NXP Semiconductors
Total Page 15 Pages
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