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BLF6G20LS-110 Datasheet

Power LDMOS transistor

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BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Rev. 01 — 28 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp
ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1930 to 1990
28 25
19 31 37[1]
ACPR
(dBc)
40[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 900 mA:
N Average output power = 25 W
N Power gain = 19 dB
N Efficiency = 31 %
N IMD3 = 37 dBc
N ACPR = 40 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)


NXP Semiconductors Electronic Components Datasheet

BLF6G20LS-110 Datasheet

Power LDMOS transistor

No Preview Available !

BLF6G20LS-110 pdf
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BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 1800 MHz to 2000 MHz frequency range
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G20-110 (SOT502A)
1 drain
2 gate
3 source
BLF6G20LS-110 (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Symbol
11
3
[1]
22
3
sym112
11
3
[1]
22
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLF6G20-110 -
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF6G20LS-110 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- 29 A
65 +150 °C
- 225 °C
BLF6G20-110_BLF6G20LS-110_1
Preliminary data sheet
Rev. 01 — 28 January 2008
© NXP B.V. 2008. All rights reserved.
2 of 9


Part Number BLF6G20LS-110
Description Power LDMOS transistor
Maker NXP Semiconductors
Total Page 9 Pages
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