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NXP Semiconductors Electronic Components Datasheet

BLF2022-90 Datasheet

UHF power LDMOS transistor

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BLF2022-90 pdf
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2022-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Sep 09
2003 Feb 24


NXP Semiconductors Electronic Components Datasheet

BLF2022-90 Datasheet

UHF power LDMOS transistor

No Preview Available !

BLF2022-90 pdf
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-90
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 750 mA:
– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR = 42 dBc at 3.84 MHz
– dim = 36 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
1
Top view
2
3
MBK394
Fig.1 Simplified outline.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source class-AB test circuit.
MODE OF OPERATION
f
(MHz)
VDS
IDQ
(V) (mA)
PL
(W)
2-tone, class-AB
W-CDMA, 3GPP test
model 1, 64 channels
with 66% clipping
f1 = 2170; f2 = 2170.1
2 140
28
28
750 90 (PEP)
750 15 (AV)
Gp
(dB)
12.8
13.2
ηD
(%)
35.7
dim
(dBc)
28.5
ACLR5
(dBc)
20 − −40
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
2


Part Number BLF2022-90
Description UHF power LDMOS transistor
Maker NXP
Total Page 12 Pages
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