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NXP Semiconductors Electronic Components Datasheet

BLF2022-30 Datasheet

UHF power LDMOS transistor

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BLF2022-30 pdf
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-30
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Dec 19
2003 Feb 24


NXP Semiconductors Electronic Components Datasheet

BLF2022-30 Datasheet

UHF power LDMOS transistor

No Preview Available !

BLF2022-30 pdf
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-30
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 240 mA:
– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR = 45 dBc at 3.84 MHz
– dim = 42 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT608A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
Top view
2
3
MBL290
Fig.1 Simplified outline (SOT608A).
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
IDQ
(V) (mA)
PL
(W)
2-tone, class-AB
two-carrier W-CDMA test
model 1, 64 channels
f1 = 2170; f2 = 2170.1
f1 = 2155; f2 = 2165
28
28
240 30 (PEP)
270 3.5 (AV)
Gp
(dB)
12.6
12.9
ηD
(%)
34.3
16.5
dim
(dBc)
29.5
ACLR5
(dBc)
42 45
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
2


Part Number BLF2022-30
Description UHF power LDMOS transistor
Maker NXP
Total Page 12 Pages
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