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NXP Semiconductors Electronic Components Datasheet

BLF0810S-180 Datasheet

Base station LDMOS transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180
Base station LDMOS transistors
Product specification
Supersedes data of 2003 May 09
2003 Jun 12


NXP Semiconductors Electronic Components Datasheet

BLF0810S-180 Datasheet

Base station LDMOS transistors

No Preview Available !

BLF0810S-180 pdf
www.DataSheet4U.com
Philips Semiconductors
Base station LDMOS transistors
Product specification
BLF0810-180; BLF0810S-180
FEATURES
Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V and IDQ of 1130 mA.
Adjacent channel bandwidth is 30 kHz, adjacent
channel at ± 750 kHz:
– Output power = 30 W
– Gain = 16 dB
– Efficiency = 27%
– ACPR = 46 dBc at 750 kHz and BW = 30 kHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
APPLICATIONS
Common source class-AB operation applications in the
860 to 960 MHz frequency range
CDMA and multicarrier applications.
DESCRIPTION
180 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B
PIN DESCRIPTION
1 drain
2 gate
3 source; connected to flange
handbook, halfpage
1
23
Top view
MBK394
Fig.1 Simplified outline SOT502A (BLF0810-180).
1
3
Top view
2
MBL105
Fig.2 Simplified outline SOT502B (BLF0810S-180).
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
(V) (W)
Class-AB (2-tone)
CDMA (IS95)
f1 = 890.0; f2 = 890.1 27 140 (PEP)
890 27 30 (AV)
Gp
(dB)
16
16
ηD d3 ACPR 750
(%) (dBc) (dBc)
39 28
27 − −46
2003 Jun 12
2


Part Number BLF0810S-180
Description Base station LDMOS transistors
Maker NXP
Total Page 16 Pages
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