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NXP Semiconductors Electronic Components Datasheet

BB145C Datasheet

Low-voltage variable capacitance diode

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB145C
Low-voltage variable capacitance
diode
Preliminary specification
2001 Dec 11


NXP Semiconductors Electronic Components Datasheet

BB145C Datasheet

Low-voltage variable capacitance diode

No Preview Available !

BB145C pdf
www.DataSheet4U.com
Philips Semiconductors
Low-voltage variable capacitance diode
Preliminary specification
BB145C
FEATURES
Ultra small plastic SMD package
Very low capacitance spread
High capacitance ratio
C1 to C4 ratio: min. 2.39, max. 2.53.
APPLICATIONS
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB145C is a variable capacitance diode, fabricated in
planar technology and encapsulated in the SOD523 ultra
small plastic SMD package.
PINNING
PIN
1 cathode
2 anode
DESCRIPTION
handboo1k, 2 columns
2
MBK441
MARKING
TYPE NUMBER
BB145C
MARKING CODE
K3
Cathode side indicated by a bar.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
VRM
IF
Tstg
Tj
PARAMETER
continuous reverse voltage
peak reverse voltage
continuous forward current
storage temperature
operating junction temperature
CONDITIONS
in series with a 10 kresistor
MIN.
55
55
MAX.
10
12
20
+150
+150
UNIT
V
V
mA
°C
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
SYMBOL
PARAMETER
IR reverse current
rs diode series resistance
Cd diode capacitance
CC-----dd---((--14---VV---))
capacitance ratio
CONDITIONS
VR = 15 V; see Fig.3
VR = 15 V; Tj = 85 °C
VR = 1 V; f = 470 MHz
VR = 1 V; f = 1 MHz
VR = 4 V; f = 1 MHz
f = 1 MHz
MIN.
6.4
2.55
2.39
MAX.
3
30
0.6
7.2
2.85
2.53
UNIT
nA
nA
pF
pF
2001 Dec 11
2


Part Number BB145C
Description Low-voltage variable capacitance diode
Maker NXP
Total Page 8 Pages
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