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NXP Semiconductors Electronic Components Datasheet

1PS89SS06 Datasheet

High-speed double diodes

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1PS89SS06 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SS04; 1PS89SS05;
1PS89SS06
High-speed double diodes
Preliminary specification
Supersedes data of 1999 Mar 01
1999 Jun 08


NXP Semiconductors Electronic Components Datasheet

1PS89SS06 Datasheet

High-speed double diodes

No Preview Available !

1PS89SS06 pdf
Philips Semiconductors
High-speed double diodes
Preliminary specification
1PS89SS04; 1PS89SS05;
1PS89SS06
FEATURES
Power dissipation comparable to
SOT23
Ultra small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
PINNING
1PS89SS..
PIN
04 05 06
1 a1 a1 k1
2 k2 a2 k2
3 k1, a2 k1, k2 a1, a2
fpage
3
APPLICATIONS
High speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in
planar technology, with different
configurations, in an ultra small
SC-89 (SOT490) plastic SMD
package.
1
Top view
2
MBK837
Fig.1 Simplified outline
(SC-89; SOT490) and
pin configuration.
MARKING
TYPE NUMBER
1PS89SS04
1PS89SS05
1PS89SS06
MARKING
CODE
S4
S5
S6
3
12
MGL550
Fig.2 1PS89SS04 diode
configuration (symbol).
3
12
MGL551
Fig.3 1PS89SS05 diode
configuration (symbol).
3
12
MGL552
Fig.4 1PS89SS06 diode
configuration (symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode unless otherwise specified
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Tamb = 25 °C; note 1; see Fig.5
single diode loaded
both diodes loaded
square wave; Tj = 25 °C prior to
surge; see Fig.7
t = 1 µs
t=1s
MIN. MAX. UNIT
85 V
80 V
200 mA
125 mA
500 mA
4A
0.5 A
1999 Jun 08
2


Part Number 1PS89SS06
Description High-speed double diodes
Maker NXP
Total Page 12 Pages
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