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NIKO-SEM
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P0770ETF Datasheet Preview

P0770ETF Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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P0770ETF pdf
NIKO-SEM
N-Channel Enhancement Mode P0770ETF:TO-220F
Field Effect Transistor
P0770ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
1.4Ω
ID
7A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
700
±30
7
4
20
2.2
24
43
17
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.9
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
700
VDS = VGS, ID = 250A
2 2.6 4
VDS = 0V, VGS = ±30V
±100
VDS = 700V, VGS = 0V , TC = 25 °C
1
VDS = 560V, VGS = 0V , TC = 100 °C
10
V
nA
A
REV 1.0
1
F-16-5



NIKO-SEM
NIKO-SEM

P0770ETF Datasheet Preview

P0770ETF Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

P0770ETF pdf
NIKO-SEM
N-Channel Enhancement Mode P0770ETF:TO-220F
Field Effect Transistor
P0770ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 3.5A
VDS = 10V, ID = 3.5A
DYNAMIC
1.1
9
Input Capacitance
Ciss
1185
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
105
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 560V, ID =7A, VGS = 10V
VDD = 350V, ID =7A, RG= 25Ω
10
30
5
9
35
75
80
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 7A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 7A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
404
3.8
1.4
7
1
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-16-5


Part Number P0770ETF
Description N-Channel Enhancement Mode Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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