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  NEC Electronic Components Datasheet  

MC-45D16CB641 Datasheet

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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MC-45D16CB641 pdf
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-45D16CB641
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-45D16CB641 is a 16,777,216 words by 64 bits DDR synchronous dynamic RAM module on which 8 pieces
of 128M DDR SDRAM: µPD45D128842 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency
Part number
/CAS latency
Clock frequency
(MAX.)
Module type
MC-45D16CB641KF-C75
CL = 2.5
133 MHz
DDR SDRAM
CL = 2
100 MHz
Unbuffered DIMM
MC-45D16CB641KF-C80
CL = 2.5
125 MHz
Design specification
CL = 2
100 MHz
Rev.0.9 compliant
Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge
Double Data Rate interface
Differential CLK (/CLK) input
Data inputs and DM are synchronized with both edges of DQS
Data outputs and DQS are synchronized with a cross point of CLK and /CLK
Quad internal banks operation
Possible to assert random column address in every clock cycle
Programmable Mode register set
/CAS latency (2, 2.5)
Burst length (2, 4, 8)
Wrap sequence (Sequential / Interleave)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
2.5 V ± 0.2 V Power supply for VDD
2.5 V ± 0.2 V Power supply for VDDQ
SSTL_2 compatible with all signals
4,096 refresh cycles / 64 ms
Burst termination by Precharge command and Burst stop command
184-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14897EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000



  NEC Electronic Components Datasheet  

MC-45D16CB641 Datasheet

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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MC-45D16CB641 pdf
MC-45D16CB641
Ordering Information
Part number
Clock frequency
(MAX.)
Package
Mounted devices
MC-45D16CB641KF-C75
133 MHz
184-pin Dual In-line Memory Module 8 pieces of µPD45D128842G5 (Rev. K)
(Socket Type)
(10.16 mm (400) TSOP (II))
MC-45D16CB641KF-C80
125 MHz
Edge connector: Gold plated
31.75 mm height
2 Preliminary Data Sheet M14897EJ2V0DS00



  NEC Electronic Components Datasheet  

MC-45D16CB641 Datasheet

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

No Preview Available !

MC-45D16CB641 pdf
MC-45D16CB641
Pin Configuration
184-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
93 VSS
VREF
1
94 DQ4
DQ0
2
95 DQ5
VSS 3
96 VDDQ
DQ1
4
97
DM0/DQS9
DQS0
5
98 DQ6
DQ2
6
99 DQ7
VDD 7
100 VSS
DQ3
8
101 NC
NC 9
102 NC
/RESET
10
103 NC
VSS 11
104 VDDQ
DQ8
12
105 DQ12
DQ9
13
106 DQ13
DQS1
14
107
DM1/DQS10
VDDQ
15
108 VDD
CK1 16
109 DQ14
/CK1
17
110 DQ15
VSS 18
111 NC
DQ10
19
112 VDDQ
DQ11
20
113 NC
CKE0
21
114 DQ20
VDDQ
22
115 NC
DQ16
23
116 VSS
DQ17
24
117 DQ21
DQS2
25
118 A11
VSS 26
119
DM2/DQS11
A9
27
120 VDD
DQ18
28
121 DQ22
A7 29
122 A8
VDDQ
30
123 DQ23
DQ19
31
124 VSS
A5 32
125 A6
DQ24
33
126 DQ28
VSS 34
127 DQ29
DQ25
35
128 VDDQ
DQS3
36
129
DM3/DQS12
A4
37
130 A3
VDD 38
131 DQ30
DQ26
39
132 VSS
DQ27
40
133 DQ31
A2 41
134 NC
VSS 42
135 NC
A1 43
136 VDDQ
NC 44
137 CK0
NC 45
138 /CK0
VDD 46
139 VSS
NC 47
140 NC
A0 48
141 A10
NC 49
142 NC
VSS 50
143 VDDQ
NC 51
144 NC
BA1 52
145 VSS
DQ32
53
146 DQ36
VDDQ
54
147 DQ37
DQ33
55
148 VDD
DQS4
56
149 DM4/DQS13 DQ34 57
150 DQ38
VSS 58
151 DQ39
BA0 59
152 VSS
DQ35
60
153 DQ44
DQ40
61
154 /RAS
VDDQ
62
155 DQ45
/WE 63
156 VDDQ
DQ41
64
157 /S0
/CAS
65
158 NC
VSS 66
159 DM5/DQS14 DQS5 67
160 VSS
DQ42
68
161 DQ46
DQ43
69
162 DQ47
VDD 70
163 NC
NC 71
164 VDDQ
DQ48
72
165 DQ52
DQ49
73
166 DQ53
VSS 74
167 NC
CK2 75
168 VDD
/CK2
76
169
DM6/DQS15
VDDQ
77
170 DQ54
DQS6
78
171 DQ55
DQ50
79
172 VDDQ
DQ51
80
173 NC
VSS 81
174 DQ60
VDDID
82
175 DQ61
DQ56
83
176 VSS
DQ57
84
177
DM7/DQS16
VDD
85
178 DQ62
DQS7
86
179 DQ63
DQ58
87
180 VDDQ
DQ59
88
181 SA0
182 SA1
VSS 89
NC 90
183 SA2
SDA
91
184 VDDSPD
SCL 92
/xxx indicates active low signal.
A0 - A11
: Address Inputs
[Row: A0 - A11, Column: A0 - A9]
BA0, BA1
: SDRAM Bank Select
DQ0 - DQ63
: Data Inputs/Outputs
CK0 - CK2
: Clock Input
(positive line of differential pair)
/CK0 - /CK2
: Clock Input
(negative line of differential pair)
CKE0
: Clock Enable Input
/S0 : Chip Select Input
/RAS
: Row Address Strobe
/CAS
: Column Address Strobe
/WE : Write Enable
DQS0 - DQS7
: Low Data Strobe
DM(0 - 7) / DQS(9 - 16) : Low Data Masks /
High Data Strobe
SA0 - SA2
: Address Input for EEPROM
SDA
: Serial Data I/O for PD
SCL : Clock Input for PD
VDD : Power Supply
VSS : Ground
VDDID
: VDD Identification Flag
VDDQ
: Power Supply for DQ and DQS
VREF
: Input Reference
VDDSPD
: Power supply for EEPROM
NC : No Connection
/RESET
: Reset Input
Preliminary Data Sheet M14897EJ2V0DS00
3




Part Number MC-45D16CB641
Description 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Maker NEC
Total Page 16 Pages
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