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  NEC Electronic Components Datasheet  

D2162 Datasheet

2SD2162

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D2162 pdf
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DATA SHEET
SILICON POWER TRANSISTOR
2SD2162
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2162 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE due to Darlington connection
hFE 2,000 (VCE = 2.0 V, IC = 3.0 A)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW 10 ms,
duty cycle 50%
TC = 25°C
TA = 25°C
Ratings
150
100
7.0
+8.0, 5.0
+12, 8.0
Unit
V
V
V
A
A
0.8
25
2.0
150
55 to +150
A
W
W
°C
°C
ORDERING INFORMATION
Ordering Name
2SD2162
Package
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14865EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

D2162 Datasheet

2SD2162

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D2162 pdf
ELECTRICAL CHARACTERISTICS (TA = 25°C)
www.DataPSahreaemt4eUte.crom
Collector cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Symbol
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Conditions
VCB = 100 V, IE = 0 A
VCE = 2.0 V, IC = 3.0 ANote
VCE = 2.0 V, IC = 5.0 ANote
IC = 3.0 A, IB = 3.0 mANote
IC = 3.0 A, IB = 3.0 mANote
Gain bandwidth product
fT VCE = 5.0 V, IC = 0.8 A
Collector capacitance
Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz
Turn-on time
Storage time
Fall time
ton IC = 3.0 A, RL = 16.7 ,
tstg IB1 = IB2 = 3.0 mA, VCC 50 V
Refer to the test circuit.
tf
Note Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE1
M
2,000 to 5,000
L
3,000 to 7,000
K
5,000 to 15,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SD2162
MIN.
2,000
500
TYP.
MAX.
1.0
15,000
Unit
µA
0.9 1.5
V
1.6 2.0
V
30 MHz
50 pF
1.0 µs
3.5 µs
1.2 µs
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2 Data Sheet D14865EJ2V0DS


Part Number D2162
Description 2SD2162
Maker NEC
Total Page 6 Pages
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