SILICON POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2162 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
• High hFE due to Darlington connection
hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)
• Full mold package that does not require an insulating board or
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
PW ≤ 10 ms,
duty cycle ≤ 50%
TC = 25°C
TA = 25°C
−55 to +150
INTERNAL EQUIVALENT CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14865EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan