http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  NEC Electronic Components Datasheet  

D1615A Datasheet

2SD1615A

No Preview Available !

D1615A pdf
DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low VCE (sat) VCE(sat) = 0.15 V
• Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A
Collector to Base Voltage
VCBO 60
120 V
Collector to Emitter Voltage
VCEO 50
60 V
Emitter to Base Voltage
VEBO
6
A
Collector Current (DC)
IC 1 A
Collector Current (Pulse)*
IC
2A
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature** PT
2.0 W
Maximum Temperatures
Junction Temperature
Tj 150 ˚C
Storage Temperature Range
Tstg –55 to +150
˚C
* PW 10 ms, Duty Cycle 50 %
** When mounted on ceramic substrate of 16 cm2 × 0.7 mm
PACKAGE DIMENSIONS
in millimeters
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
C
EB
0.42
±0.06
1.5 0.47
± 0.06
3.0
0.42±0.06
0.41+– 00..0053
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL MIN.
ICBO
IEBO
hFE1***
hFE2***
VCE(sat)***
VBE(sat)***
VBE***
fT
Cob
135
135
81
600
80
TYP.
290
270
0.15
0.9
160
19
MAX. UNIT
100 nA
100 nA
100 nA
600
400
0.3 V
1.2 V
700 mV
MHz
pF
TEST CONDITIONS
2SD1615
VCB = 60 V, IE = 0
2SD1615A VCB = 120 V, IE = 0
VEB = 6.0 V, IC = 0
2SC1615
VCE = 2.0 V, IC = 100 mA
2SD1615A
VCE = 2.0 V, IC = 1.0 A
IC = 1.0 A, IB = 50 mA
IC = 1.0 A, IB = 50 mA
VCE = 2.0 V, IC = 50 mA
VCE = 2.0 V, IE = –100 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
*** Pulsed: PW 350 µs, Duty Cycle 2 %
hFE Classification
MARKING 2SD1615
2SD1615A
hFE
GM
GQ
135 to 270
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
GL
GP
200 to 400
GK
300 to 600
©
1985


  NEC Electronic Components Datasheet  

D1615A Datasheet

2SD1615A

No Preview Available !

D1615A pdf
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
2.0
1.5
1.0
0.5 without heatsink
0 40 80 120 160 200
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
300 µA
200 µA
80
200 µA
60
150 µA
40
100 µA
20 IB = 50 µA
0 2 4 6 8 10
VCE – Collector to Emitter Voltage – V
1000
500
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2.0 V
200
100
50
20
10
5
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
2
2SD1615, 2SD1615A
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
5
1 pulse
2
1
0.5 200 ms
0.2
0.1
0.05
DC
0.02
0.01
1
2
5 10 20
50 100
VCE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
5.0 mA
4.5 mA
4.0 mA 3.5 mA 3.0 mA
0.8 2.5 mA
2.0 mA
0.6
1.5 mA
0.4
1.0 mA
0.2 IB = 0.5 mA
0 0.2 0.4 0.6 0.8 1.0
VCE(sat) – Collector Saturation Voltage – V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
2 IC = 20·IB
1 VBE(sat)
0.5
0.2
0.1
0.05
0.02
VCE(sat)
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10


Part Number D1615A
Description 2SD1615A
Maker NEC
Total Page 4 Pages
PDF Download
D1615A pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 D1615 2SD1615 NEC
NEC
D1615 pdf
2 D1615A 2SD1615A NEC
NEC
D1615A pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components