http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  NEC Electronic Components Datasheet  

2SD1843 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SD1843 pdf
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
• High DC current gain due to Darlington connection
• High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT(Ta = 25°C)
Tj
Tstg
Ratings
60±10
60±10
7.0
±1.0
±2.0
1.0
150
55 to +150
* PW 10 ms, duty cycle 50%
Unit
V
V
V
A
A
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
ICBO
IEBO
hFE2**
hFE2**
VCB = 40 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 0.2 A
VCE = 2.0 V, IC = 0.5 A
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCE(sat)**
VBE(sat)**
tON
tstg
tf
IC = 0.5 A, IB = 0.5 mA
IC = 0.5 A, IB = 0.5 mA
IC = 0.5 A, RL = 100
IB1 = IB2 = 0.1 mA, VCC = 50 V
* *Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
2000 to 5000
4000 to 10000 8000 to 30000
MIN.
1000
2000
TYP.
0.5
1.0
1.0
MAX.
0.5
1.0
30000
1.5
2.0
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Unit
µA
mA
V
V
µs
µs
µs
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

2SD1843 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SD1843 pdf
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SD1843
2 Data Sheet D16200EJ1V0DS


Part Number 2SD1843
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker NEC
Total Page 4 Pages
PDF Download
2SD1843 pdf
Download PDF File
2SD1843 pdf
View for Mobile






Related Datasheet

1 2SD1840 PNP / NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
Sanyo Semicon Device
2SD1840 pdf
2 2SD1841 100V/25A Switching Applications Sanyo Semicon Device
Sanyo Semicon Device
2SD1841 pdf
3 2SD1841 Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor
2SD1841 pdf
4 2SD1842 100V/40A Switching Applications Sanyo Semicon Device
Sanyo Semicon Device
2SD1842 pdf
5 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR NEC
NEC
2SD1843 pdf
6 2SD1845 Silicon NPN triple diffusion planar type Panasonic
Panasonic
2SD1845 pdf
7 2SD1845 Silicon NPN Power Transistor INCHANGE
INCHANGE
2SD1845 pdf
8 2SD1846 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SD1846 pdf
9 2SD1847 Silicon NPN Triple Diffused Planar Type Panasonic
Panasonic
2SD1847 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components