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  NEC Electronic Components Datasheet  

2SA1010 Datasheet

SILICON POWER TRANSISTOR

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2SA1010 pdf
DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25 °C)
Total power dissipation
PT (Ta = 25 °C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 300 µs, duty cycle 10%
Ratings
100
100
7.0
7.0
15
3.5
40
1.5
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Pin Connection
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002


  NEC Electronic Components Datasheet  

2SA1010 Datasheet

SILICON POWER TRANSISTOR

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2SA1010 pdf
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = 5.0 A, IB1 = 0.5 A, L = 1 mH
Collector to emitter voltage VCEX(SUS)1 IC = 5.0 A, IB1 = IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector to emitter voltage VCEX(SUS)2 IC = 10 A, IB1 = 1.0 A, IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Collector cutoff current
ICER VCE = 100 V, RBE = 51 , Ta = 125 °C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) = 1.5 V,
Ta = 125 °C
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE1 VCE = 5.0 V, IC = 0.5 A*
DC current gain
hFE2 VCE = 5.0 V, IC = 3.0 A*
DC current gain
hFE3 VCE = 5.0 V, IC = 5.0 A*
Collector saturation voltage VCE(sat) IC = 5.0 A, IB = 0.5 A*
Base saturation voltage
VBE(sat) IC = 5.0 A, IB = 0.5 A*
Turn-on time
Storage time
Fall time
ton IC = 5.0 A, RL = 10 ,
tstg IB1 = IB2 = 0.5 A, VCC ≅ −50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SA1010
MIN.
100
100
TYP.
MAX.
Unit
V
V
100
V
10 µA
1.0 mA
10 µA
1.0 mA
10 µA
40 200
40 200
20
0.6 V
1.5 V
0.5 µs
1.5 µs
0.5 µs
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
2 Data Sheet D16118EJ2V0DS


Part Number 2SA1010
Description SILICON POWER TRANSISTOR
Maker NEC
Total Page 6 Pages
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