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Motorola Electronic Components Datasheet

MRF19030LSR3 Datasheet

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF19030LSR3 pdf
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19030/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with
www.datasfhreeeqt4uue.cnocmies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
CDMA Performance @ 1990 MHz, 26 Volts
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc @ 30 kHz BW
1.25 MHz — - 55 dBc @ 12.5 kHz BW
2.25 MHz — - 55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030LR3
MRF19030LSR3
2.0 GHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19030LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Value
2.1
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 10
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19030LR3 MRF19030LSR3
1


Motorola Electronic Components Datasheet

MRF19030LSR3 Datasheet

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

No Preview Available !

MRF19030LSR3 pdf
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
www.daGtaasteh-eSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 300 mA)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
VGS(th)
VGS(Q)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Gps
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
(1) Part is internally matched both on input and output.
Min Typ Max Unit
65 — — Vdc
——
1 µAdc
——
1 µAdc
2 3 4 Vdc
2 3.3 4.5 Vdc
— 0.29 0.4 Vdc
— 2 —S
— 98.5 —
— 37 —
— 1.3 —
pF
pF
pF
— 13 — dB
— 36 — %
— - 31 — dBc
— - 13 — dB
12 13 — dB
33 36 — %
— - 31 - 28 dBc
— - 13 - 9 dB
No Degradation In Output Power
Before and After Test
MRF19030LR3 MRF19030LSR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com


Part Number MRF19030LSR3
Description The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Maker Motorola
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